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IRFU5410PBF
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package
PD-95314A
International IRFR5410PbF
TOR Rectifier IRFU5410PbF
Ultra Low On-Resistance HEXFET Power MOSFET
P-Channel D
Surface Mount (IRFR5410)
Straight Lead (IRFU5410)
Advanced Process Technology : V
Fast Switching G
Fully Avalanche Rated
Lead-Free s
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designerwith an extremely efficient
and reliable device for use in a wide variety of applications.
VDSS = -100V
RDS(on) = 0.2059.
ID = -13A
D-Pak I-Pak
The D-Pak is designed for surface mounting using vapor TO-252AA T0-251AA
phase, infrared, orwave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vss @ -10V -13
ID @ Tc = 100°C Continuous Drain Current, VGS @ -10V -8.2 A
IDM Pulsed Drain Current C) -52
PD @Tc = 25°C Power Dissipation 66 W
Linear Derating Factor 0.53 WPC
Vss Gate-to-Source Voltage i 20 V
EPs Single Pulse Avalanche Energy© 194 m]
IAR Avalanche Current© -8.4 A
EAR Repetitive Avalanche Energy© 6.3 mJ
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
T: Operating Junction and -55 to + 150
TSTG Storage Temperature Range (
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1 .9
Rem Junction-to-Ambient (PCB mount)" - 50 "CM/
Ram Junction-to-Ambient - 1 1O
1
12/13/04
IRFR/U5410PbF International
TOR Rectifier
Electrical Characteristics @ T_, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 - - V l/ss = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - -0.12 - V/°C Reference to 25°C, ID = -1.0mA
RDs(on) Static Drain-to-Source On-Resistance - - 0.205 Q Vss = -1OV, ID = -7.8A G)
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V l/rss = VGS, ID = -250pA
git Forward Transconductance 3.2 - - S VDs = -50V, ID = -7.8A
bss Drain-to-Source Leakage Current - - -25 pA I/ns = -100V, VGS = 0V
- - -250 Vrs = -80V, VGS = 0V, TJ = 150''C
'Gss Gate-to-Source Forward Leakage --- - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
(h Total Gate Charge - - 58 ID = -8.4A
Qgs Gate-to-Source Charge - - 8.3 nC VDs = -80V
di Gate-to-Drain ("Miller") Charge - - 32 VGS = -10V, See Fig. 6 and 13 (9(6)
td(on) Turn-On Delay Time - 15 - VDD = 50V
t, Rise Time - 58 - ID = -8.4A
tdw) Turn-Off Delay Time - 45 - ns Rs = 9.19
tr FaIITime - 46 - RD =6.2Q, See Fig. 10 ©©
LD Internal Drain Inductance - 4.5 - Between léad’ D
nH 6mm (0.25in.) E )
from package G
Ls Internal Source Inductance - 7.5 - and center of die contacts S
Ciss Input Capacitance - 760 - VGs = 0V
Cass Output Capacitance - 260 - pF VDs = -25V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz, See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current - _ -1 3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - -52 p-n junction diode. S
VSD Diode Forward Voltage - - -1.6 V To = 25''C, Is = -7.8A, Vss = 0V (9
t” Reverse Recovery Time - 130 190 ns TJ = 25°C, IF = -8.4A
Qrr Reverse Recovery Charge - 650 970 nC di/dt = 100A/ps @(6)
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls+LD)
Notes:
(D Repetitive rating; pulse width limited by ED Pulse width S 300ps; duty cycle S 2%.
max. junction temperature. ( See fig. 11 ) ®This is applied for I-PAK, Ls of D-PAK is measured between
© Starting Tu = 25''C, L = 6.4mH lead and center of die contact
Ras = 259, IAS-- -7.8A. (See Figure 12) ...
© lsr, f -7.8A, di/dt S 200A/ps, VDDS V(BR)ross, © Uses IRF9530N data and test conditions.
TJ 3 150°C
** When mounted on 1" square PCB (FR-4 or G-IO Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
