IRFU4615PBF ,150V Single N-Channel HEXFET Power MOSFET in a I-Pak packageApplicationsHigh Efficiency Synchronous Rectification in SMPSR typ.34m
IRFU4615PBF
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International IRFR461W
TOR Rectifier [IiimllJ(imilaRldjir
HEXFET® Power MOSFET
Applications Voss 150V
q High Efficiency Synchronous Rectification in SMPS RDS(°n) typ. 34mg
0 Uninterruptible Power Supply
0 High Speed Power Switching G max. 42mQ
. Hard Switched and High Frequency Circuits s ID 33A
D D ',i,
Benefits 1fi)), 'Rie V
. Improved Gate, Avalanche and Dynamic dV/dt ' l f s ' . ' s
Ruggedness G GD
q Fully Characterized Capacitance and Avalanche Dpak IPAK
SOA . . . IRFR4615PbF lRFU4615PbF
Enhanced body diode dV/dt and dl/dt Capability
Lead-Free G D s
Gate Drain Source
Base Part Number Package Type Standard Pack . Orderable Part Number
Farm Quantity
IRFR4615PbF Tube/Bulk 75 IRFR4615PbF
IRFR4615THLPbF D-PAK Tape and Reel Left 3000 IRFR4615THLPbF
IRFU4615PbF I-PAK Tube/Bulk 75 IRFU4615PbF
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, Vss @ 10V 33
ID @ To = 100°C Continuous Drain Current, Vas © 10V 24 A
G, Pulsed Drain Current co 140
PD @Tc = 25°C Maximum Power Dissipation 144 W
Linear Derating Factor 0.96 W/°C
Vas Gate-to-Source Voltage l 20 V
dv/dt Peak Diode Recovery (3 38 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range QC
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Avalanche Characteristics
EAS (Thermallylimited) Single Pulse Avalanche Energy C) 109 mJ
|AR Avalanche Current (D See Fig. 14, 15, 22a, 22b, A
EAR Repetitive Avalanche Energy C) mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJC Junction-to-Case - 1.045
RBJA Junction-to-Ambient (PCB Mount) © - 50 °C/W
RBJA Junction-to-Ambient - 110
Notes C) through are on page 11
fl © 2013 International Rectifier May 16, 2013
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Static © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 - - V Vss = 0V, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.19 - V/°C Reference to 25°C, ID = 5mA00
RDs(on) Static Drain-to-Source On-Resistance - 34 42 mg Vas = 10V, ID = 21A GD
Vegan) Gate Threshold Voltage 3.0 - 5.0 V VDS = Vss, ID = 100uA
IDSS Drain-to-Source Leakage Current - - 20 Vos = 150V, I/ss = 0V
- - 250 PA Vios = 150v, Vas = OV, T, = 125°C
lass Gate-to-Source Forward Leakage - - 100 l/ss = 20V
Gate-to-Source Reverse Leakage - - -100 nA Vss = -20V
Rem Internal Gate Resistance - 2.7 - n
Dynamic © T, = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 35 - - S VDS = 50V, ID = 21A
q, Total Gate Charge - 26 ID = 21A
ags Gate-to-Source Charge - 8.6 - Vos = 75V
di Gate-to-Drain ("Miller") Charge - 9.0 - nC Vas = 10V GD
stnc Total Gate Charge Sync. (Qg - di) - 17 - ID = 21A, Vros =OV, Vss = 10V
tdmn, Turn-On Delay Time - 15 - Va, = 98V
t, Rise Time - 35 - ID = 21A
tion Turn-Off Delay Time - 25 - ns Rs = 7.39
t, Fall Time - 20 - Vss = 10V Ci)
Ciss Input Capacitance - 1750 - Vas = 0V
Cass Output Capacitance - 155 - Vos = 50V
C,, Reverse Transfer Capacitance - 40 - pF f = 1.0MHz (See Fig.5)
Coss eff. (ER) Effective Output Capacitance (Energy Related)© - 179 - Vss = 0V, Vos = 0V to 120V ©(See Fig.11)
Coss eff. (TR) Effective Output Capacitance (Time Related)S - 382 - Vas = 0V, Vos = 0V to 120V ©
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current _ - 33 MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current A integral reverse G
. - - 140 . . .
(Body Diode) C) p-n Junction diode. S
Va, Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 21A, Vss = 0V GD
t,, Reverse Recovery Time - 7O - T J = 25°C VR = 100V,
_ 83 - ns T, = 125°C IF = 21A
a,, Reverse Recovery Charge - 177 - nC TJ = 25°C di/dt = 100A/ps ©
- 247 - TJ = 125°C
IRRM Reverse Recovery Current - 4.9 - A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
lil © 2013 International Rectifier May 16, 2013
