IRFU330B ,400V N-Channel MOSFETIRFR330B / IRFU330BNovember 2001IRFR330B / IRFU330B400V N-Channel MOSFET
IRFU330B ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 4.5A, 400V, R = 1.0Ω @V = 10 VDS(on) ..
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IRFU330B
400V N-Channel MOSFET
IRFR330B / IRFU330B November 2001 IRFR330B / IRFU330B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 400V, R = 1.0Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 25 nC) planar, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. D !!!!!!!! D ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● I-PAK D-PAK GS IRFR Series IRFU Series GS D !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRFR330B / IRFU330B Units V Drain-Source Voltage 400 V DSS I - Continuous (T = 25°C) Drain Current 4.5 A D C - Continuous (T = 100°C) 2.9 A C I (Note 1) Drain Current - Pulsed 18 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 330 mJ AS I Avalanche Current (Note 1) 4.5 A AR E (Note 1) Repetitive Avalanche Energy 4.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 48 W C - Derate above 25°C 0.38 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.6 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. B, November 2001
