IRFU230B ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 7.5A, 200V, R = 0.4Ω @V = 10 VDS(on) ..
IRFU310 ,400V Single N-Channel HEXFET Power MOSFET in a I-Pak packageInternatiqnal PD-9.597A
TOR Rectifier IRFR310
HEXFETO Power MOSFET IRFU31 O
q Dynamic dv/dt ..
IRFU310B ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 1.7A, 400V, R = 3.4Ω @V = 10 VDS(on) ..
IRFU310BTU ,400V N-Channel B-FET / Substitute of IRFU310 & IRFU310AIRFR310B / IRFU310BNovember 2001IRFR310B / IRFU310B400V N-Channel MOSFET
IRFU320 ,400V Single N-Channel HEXFET Power MOSFET in a I-Pak packageapplications.
D-PAK
TO-252AA
l-PAK
TO-251AA
Absolute Maximum Ratings
- - 1 d Paramete ..
IRFU320B ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 3.1A, 400V, R = 1.75Ω @V = 10 VDS(on) ..
ISL95870BHRZ , PWM DC/DC Controller with VID Inputs for Portable GPU Core-Voltage Regulator
ISL95870BHRZ , PWM DC/DC Controller with VID Inputs for Portable GPU Core-Voltage Regulator
ISL95870HRUZ-T , PWM DC/DC Controller with VID Inputs for Portable GPU Core-Voltage Regulator
ISL95870HRUZ-T , PWM DC/DC Controller with VID Inputs for Portable GPU Core-Voltage Regulator
ISL95870HRUZ-T , PWM DC/DC Controller with VID Inputs for Portable GPU Core-Voltage Regulator
ISL95871CHRZ , SMBus Interfaced Battery Charger with Internal FETs
IRFU230B
200V N-Channel MOSFET
IRFR230B / IRFU230B November 2001 IRFR230B / IRFU230B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.5A, 200V, R = 0.4Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 22 nC) planar, DMOS technology. • Low Crss ( typical 15 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! I-PAK ● ● ● ● ● ● ● ● D-PAK GS IRFR Series IRFU Series GS D !!!! !!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRFR230B / IRFU230B Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 7.5 A D C - Continuous (T = 100°C) 4.8 A C I (Note 1) Drain Current - Pulsed 30 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 160 mJ AS I Avalanche Current (Note 1) 7.5 A AR E (Note 1) Repetitive Avalanche Energy 5.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 50 W C - Derate above 25°C 0.4 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.5 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. B, November 2001
