IRFU014. ,Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A)PD-9.701A
International
Toat Rectifier |RFRO14
M
q Dynamic dv/dt Rating
. Surface Moun ..
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Absolute Maximum Ratings
l-PAK
TO-251AA
TO-252AA
Parameter Max. Units 7
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IRFU014-IRFU014.
Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A)
kttennati
Rectifier
HEXFET® Power MOSFET
Dynamic dv/dt
Surface Mount
Fast Switching
0 Ease of Paralleling
It Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Straight Lead (IRFU014)
Available in Tape & Reel
PD-9.701A
|RFRO14
IRFUO14
Rating
(IRFR014)
I/ross---' 60V
RDS(on) 'e.1: 0.209
ID = 7.7A
on-resistance and cost-effectiveness.
The D-Pak is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
raa;ic,ssfii,ii))
are possible in typical surface mount applications. D-PAK I-PAK
TO-252AA TO-251AA
Absolute Maximum Ratings
Parameter Max, Units r
l0910 = 25°C Continuous Drain Current, Ves @ 10 V 7.7 l
ID @ Tc = 100°C Continuous Drain Current, Vss @ 10 V 4.9 A
m ________2 fyjss1r1r_a_irpfityer1rfC, 31
Pro @ Tc = 25°C Power Dissipation 25 W
fro @ TA = 25°C Power Dissipation (PCB Mount)" 2.5
Linear Derating Factor 0.20 WPC l
Linear Derating Factor (PCB Mount)" 0.020
Ves Gate-to-Source Voltage rE0 V
EAS Single Pulse Avalanche Energy 2 47 mJ
dv/dt Peak Diode Fle0overy dv/dt Q) 4.5 V/ns l
-EISLGQQ 2 Junction and Storage Temperature Range -55 to +150 °C (
--- - Soldering Temperature, for 10 seconds 260 (1.6mm from case) ;
Thermal Resistance
cr, _ _ _ _ _ _ - ___ Parameter Min, T Typ. Max. Units
Rac - _Anpipetirtiyi ""- .__ - _ - - - 5.0
RGJA Junction-to-Ambien-tCf-tpsy/It)" - - 1 50 °C/W
Re» -tdyEti_oItte1I1itlt, - - - ( 1 10
** When mounted on I" square PCB (FR-4 or G-1O Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRFRO14, iRFU014
Electrical Characteristics © TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(Bnmss Drain-to-Source Breakdown Voltage 60 - - V I/ss-MN, ID: 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient -... 0.068 - V/°C Reference to 25°C, ID: 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 0.20 n VGs=10V, |D=4.6A G)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS=VG3, ltr-- 250PA
gys Forward Transconductance 2.4 - - S Vos=25V, |o=4.6A (4)
loss Drain-to-Source Leakage Current - - 25 11A Vios=601/, VGs=0V
- - 250 Vos=48V, Vss=OV, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=2OV
Gate-to-Source Reverse Leakage -- - -100 VGs=-20V
ch Total Gate Charge - - 11 lo=10A
Qgs Gate-to-Source Charge - - 3.1 nC VDs=48V
di Gate-to-Drain ("Miller") Charge - - 5.8 Ves=10V See Fig. 6 and 13 co
tam) Turn-On Delay Time - 10 - VDD=SOV
tr Rise Time - 50 - ns b--IOA
tum) Turn-Off Delay Time - 13 - Re=24§2
t, Fall Time - 19 - RD=2.7Q See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - iiit11elJ.lte.') D
nH from package GE
Ls Internal Source Inductance - 7.5 -- Ind center df
die contact s
Ciss Input Capacitance - 300 - VGs=0V
Cass Output Capacitance - 160 - pF V05: 25V
Crss Reverse Transfer Capacitance - 29 - f=1.0MHz See F igure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units i Test Conditions
Is Continuous Source Current - - 7 7 MOSFET symbol D
(Body Diode) _ A showing the b,-,",),
_ Iss, Pulsed Source Current - - 31 integral reverse G (ti-l,
, (Body Diode) co p-n junction diode. s
Vso Diode Forward Voltage - - 1.6 V TJ=25°C, Is=7.7A. Vss=OV ©
tn Reverse Recovery Time - 70 140 ns TJ=25°C, lr=10A
er Reverse Recovery Charge - 0.20 0.40 PC di/dt=100A/ps g)
ton Fo rward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by L3+LD)
Notes:
CO Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Q) VDD=25V, starting TJ=25°C, L=924uH
Rs--25n, |As=7.7A (See Figure 12)
© 15051 CA, di/de90A/ws, VDDSV(BR)Dss,
TJS150°C
© Pulse width s: 300 us; duty cycle 32%.
