IRFS9N60A ,600V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV R (on) max IDSS DS Dl Switch Mode Power Supply ( SMPS )600V 0.75Ω 9.2Al Uninterruptab ..
IRFSL11N50A ,500V Single N-Channel HEXFET Power MOSFET in a TO-262 packagePD- 91847AIRFSL11N50A®HEXFET Power MOSFETl Dynamic dv/dt RatingDl Repetitive Avalanche RatedV = 500 ..
IRFSL3107PBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-262 package IRFS3107PbFIRFSL3107PbFHEXFET Power MOSFET
IRFSL31N20DPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-262 packagePD- 93805BIRFB31N20D IRFS31N20DSMPS MOSFETIRFSL31N20D®HEXFET Power MOSFET
IRFSL3206 ,60V Single N-Channel HEXFET Power MOSFET in a TO-262 packageApplications High Efficiency Synchronous RectificationDV 60VDSSin SMPSR typ.2.4m
IRFS9N60A
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
PD - 91817A
International
. . SMPS MOSFET
TOR Rectifier IRFS9N60A
HEXFET® Power MOSFET
Applications
q Switch Mode Power Supply ( SMPS ) Voss RDs(on) max ID
0 Uninterruptable Power Supply 600V 0.759 9.2A
q High Speed Power Switching
Benefits
q Low Gate Charge Clg results in Simple
Drive Requirement
q Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
o Fully Characterized Capacitance and
Avalanche Voltage and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 9.2
ID @ Tc = 100°C Continuous Drain Current, VGs @ 10V 5.8 A
IDM Pulsed Drain Current (D 37
Po @Tc = 25°C Power Dissipation 170 W
Linear Derating Factor 1.3 Wl°C
VGS Gate-to-Source Voltage , 30 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range 00
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Applicable Off Line SMPS Topologies:
o Active Clamped Forward
q Main Switch
Notes co through s are on page 9
1
9/23/99
IRFS9N60A
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpSS Drain-to-Source Breakdown Voltage 600 - - V VGs = 0V, ID = 250pA
AV
RDs(on) Static Drain-to-Source On-Resistance - - 0.75 n VGs = 10V, ID = 5.5.A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGs, ID = 250PA
loss Drain-to-Source Leakage Current _- _- Ji, pA VS: -] :28: V2: =" g, To = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
Gate-to-Source Reverse Leakage - - -100 Was = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 5.5 - - S Vos = 25V, ID = 3.1A
Qg Total Gate Charge - - 49 ID = 9.2A
Qgs Gate-to-Source Charge - - 13 nC Vos = 400V
di Gate-to-Drain ("Miller") Charge - - 20 Vss = 10V, See Fig. 6 and 13 G)
td(on) Turn-On Delay Time - 13 - VDD = 300V
tr Rise Time - 25 - ns ID = 9.2A
tam) Turn-Off Delay Time - 30 - RG = 9.19
tr Fall Time - 22 - R9 = 35.50,See Fig. 10 ©
Ciss Input Capacitance - 1400 - VGS = 0V
C055 Output Capacitance - 180 - I/rss = 25V
Crss Reverse Transfer Capacitance - 7.1 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 1957 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Cass Output Capacitance - 49 - VGS = 0V, Vos = 480V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 96 - VGs = 0V, Vos = 0V to 480V S
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 290 mJ
IAR Avalanche Currentc0 - 9.2 A
EAR Repetitive Avalanche Energy0) - 17 mJ
Thermal Resistance
Parameter Typ. Max. Units
Rea: Junction-to-Case - 0.75
ReJA Junction-to-Ambient (PCB Mounted,steady-state) - 40 °CNV
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 9.2 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - 37 p-n junction diode. s
I/sro Diode Forward Voltage - - 1.5 V TJ = 25°C, Is = 9.2A, VGS = 0V ©
trr Reverse Recovery Time - 530 800 ns To = 25°C, IF = 9.2A
Qrr Reverse RecoveryCharge - 3.0 4.4 pC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by Ls+Lro)
