IRFS820B ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 2.5A, 500V, R = 2.6Ω @V = 10 VDS(on) ..
IRFS830A , Advanced Power MOSFET
IRFS830A , Advanced Power MOSFET
IRFS830B ,500V N-Channel MOSFETIRF830B/IRFS830BNovember 2001IRF830B/IRFS830B500V N-Channel MOSFET
IRFS830BT ,500V N-Channel B-FET / Substitute of IRFS830 & IRFS830AFeaturesThese N-Channel enhancement mode power field effect • 4.5A, 500V, R = 1.5Ω @V = 10 VDS(on) ..
IRFS840 ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 8.0A, 500V, R = 0.8Ω @V = 10 VDS(on) ..
ISL9209IRZ-T , Charging System Safety Circuit
ISL9211AIRU58XZ-T , Charging System Safety Circuit
ISL9212BIRZ , Charging System Safety Circuit
ISL9212IRZ , Charging System Safety Circuit
ISL9221IRZ , Dual Input Lithium Ion Battery Charger with OVP USB Bypass and 10mA LDO
ISL9221IRZ-T , Dual Input Lithium Ion Battery Charger with OVP USB Bypass and 10mA LDO
IRFS820B
500V N-Channel MOSFET
IRF820B/IRFS820B November 2001 IRF820B/IRFS820B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.5A, 500V, R = 2.6Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 14 nC) planar, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRF820B IRFS820B Units V Drain-Source Voltage 500 V DSS I - Continuous (T = 25°C) Drain Current 2.5 2.5 * A D C - Continuous (T = 100°C) 1.6 1.6 * A C I (Note 1) Drain Current - Pulsed 8.0 8.0 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 200 mJ AS I Avalanche Current (Note 1) 2.5 A AR E (Note 1) Repetitive Avalanche Energy 4.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 49 33 W D C - Derate above 25°C 0.39 0.27 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case Max. 2.57 3.74 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W θJA ©2001 Rev. A, November 2001
