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IRFS730B from 仙僮,Fairchild Semiconductor

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IRFS730B

Manufacturer: 仙僮

400V N-Channel MOSFET

Partnumber Manufacturer Quantity Availability
IRFS730B 仙僮 15900 In Stock

Description and Introduction

400V N-Channel MOSFET The IRFS730B is a power MOSFET manufactured by 仙僮. Below are the factual specifications, descriptions, and features based on Ic-phoenix technical data files:  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 500V  
- **Continuous Drain Current (ID):** 4.3A  
- **Pulsed Drain Current (IDM):** 17A  
- **Power Dissipation (PD):** 38W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 3.0Ω (at VGS = 10V, ID = 2.1A)  
- **Input Capacitance (Ciss):** 300pF (typical)  
- **Output Capacitance (Coss):** 60pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 15pF (typical)  
- **Turn-On Delay Time (td(on)):** 10ns (typical)  
- **Turn-Off Delay Time (td(off)):** 35ns (typical)  
- **Package:** TO-220AB  

### **Descriptions & Features:**  
- Designed for high-voltage switching applications.  
- Low gate charge for improved switching efficiency.  
- Fast switching speed for high-frequency applications.  
- Avalanche energy rated for rugged performance.  
- Suitable for power supplies, motor control, and inverters.  

This information is based solely on the provided knowledge base.

Application Scenarios & Design Considerations

400V N-Channel MOSFET
Partnumber Manufacturer Quantity Availability
IRFS730B FSC 80 In Stock

Description and Introduction

400V N-Channel MOSFET The IRFS730B is a power MOSFET manufactured by International Rectifier (now part of Infineon Technologies). Below are the factual details from Ic-phoenix technical data files:  

### **Manufacturer:**  
- **FSC (Federal Supply Code):** 5961-01-369-8594  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Voltage Rating (VDS):** 500V  
- **Current Rating (ID):** 4.3A (continuous)  
- **Power Dissipation (PD):** 125W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 1.5Ω (max) at VGS = 10V  
- **Package:** TO-220AB  

### **Descriptions and Features:**  
- Designed for high-voltage, high-speed switching applications.  
- Low gate charge for improved efficiency.  
- Avalanche energy specified for ruggedness.  
- Suitable for power supplies, motor control, and inverters.  
- Fast switching performance with low conduction losses.  

This information is based on the available technical specifications for the IRFS730B.

Application Scenarios & Design Considerations

400V N-Channel MOSFET

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