IRFS720 ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 3.3A, 400V, R = 1.75Ω @V = 10 VDS(on) ..
IRFS720B ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 3.3A, 400V, R = 1.75Ω @V = 10 VDS(on) ..
IRFS720B ,400V N-Channel MOSFETIRF720B/IRFS720BNovember 2001IRF720B/IRFS720B400V N-Channel MOSFET
IRFS730B ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.5A, 400V, R = 1.0Ω @V = 10 VDS(on) ..
IRFS730B ,400V N-Channel MOSFETIRF730B/IRFS730BNovember 2001IRF730B/IRFS730B400V N-Channel MOSFET
IRFS740B ,400V N-Channel MOSFETIRF740B/IRFS740BNovember 2001IRF740B/IRFS740B400V N-Channel MOSFET
ISL9205CIRZ , Li-ion Battery Charger
ISL9205DIRZ , Li-ion Battery Charger
ISL9206ADRTZ-T , FlexiHash For Battery Authentication
ISL9209BIRZ , Charging System Safety Circuit
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IRFS720
400V N-Channel MOSFET
IRF720B/IRFS720B November 2001 IRF720B/IRFS720B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.3A, 400V, R = 1.75Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 14 nC) planar, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRF720B IRFS720B Units V Drain-Source Voltage 400 V DSS I - Continuous (T = 25°C) Drain Current 3.3 3.3 * A D C - Continuous (T = 100°C) 2.1 2.1 * A C I (Note 1) Drain Current - Pulsed 13.2 13.2 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 240 mJ AS I Avalanche Current (Note 1) 3.3 A AR E (Note 1) Repetitive Avalanche Energy 4.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 49 33 W D C - Derate above 25°C 0.39 0.27 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter IRF720B IRFS720B Units R Thermal Resistance, Junction-to-Case Max. 2.57 3.74 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W θJA ©2001 Rev. A, November 2001
