IRFS650B ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 15.8A, 200V, R = 0.085Ω @V = 10 VDS(o ..
IRFS650B ,200V N-Channel MOSFETIRFS650BNovember 2001IRFS650B200V N-Channel MOSFET
IRFS654 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 21A, 250V, R = 0.14Ω @V = 10 VDS(on) ..
IRFS654B ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 21A, 250V, R = 0.14Ω @V = 10 VDS(on) ..
IRFS720 ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 3.3A, 400V, R = 1.75Ω @V = 10 VDS(on) ..
IRFS720B ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 3.3A, 400V, R = 1.75Ω @V = 10 VDS(on) ..
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IRFS650B
200V N-Channel MOSFET
IRFS650B November 2001 IRFS650B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 15.8A, 200V, R = 0.085Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 95 nC) planar, DMOS technology. • Low Crss ( typical 75 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● TO-220F !!!!!!!! G D S IRFS Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRFS650B Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 15.8 A D C - Continuous (T = 100°C) 10 A C I (Note 1) Drain Current - Pulsed 63 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 600 mJ AS I Avalanche Current (Note 1) 15.8 A AR E (Note 1) Repetitive Avalanche Energy 5.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.0 V/ns P Power Dissipation (T = 25°C) 50 W D C - Derate above 25°C 0.4 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.51 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2001 Rev. B, November 2001
