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IRFS630B
200V N-Channel MOSFET
IRF630B/IRFS630B October 2001 IRF630B/IRFS630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.0A, 200V, R = 0.4Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 22 nC) planar, DMOS technology. • Low Crss ( typical 15 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRF630B IRFS630B Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 9.0 9.0 * A D C - Continuous (T = 100°C) 5.7 5.7 * A C I (Note 1) Drain Current - Pulsed 36 36 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 160 mJ AS I Avalanche Current (Note 1) 9.0 A AR E (Note 1) Repetitive Avalanche Energy 7.2 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 72 38 W D C - Derate above 25°C 0.57 0.3 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter IRF630B IRFS630B Units R Thermal Resistance, Junction-to-Case Max. 1.74 3.33 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W θJA ©2001 Rev. A, October 2001
