IRFS4710PBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters100V 0.014Ω 75A Motor Control U ..
IRFS520A ,N-CHANNEL POWER MOSFETFEATURESBV = 100 VDSS Avalanche Rugged TechnologyΩR = 0.2DS(on) Rugged Gate Oxide Tec ..
IRFS52N15D ,150V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters150V 0.032Ω 60ABenefits Low Gate ..
IRFS52N15DPBF , HEXFET Power MOSFET
IRFS530A ,N-CHANNEL POWER MOSFETFEATURESBV = 100 VDSS Avalanche Rugged TechnologyΩR = 0.11DS(on) Rugged Gate Oxide Te ..
IRFS530A ,N-CHANNEL POWER MOSFETIRFS530AAdvanced Power MOSFET
ISL9014IRKCZ , Dual LDO with Low Noise, Low IQ, and High PSRR
ISL9014IRKFZ , Dual LDO with Low Noise, Low IQ, and High PSRR
ISL9014IRKJZ , Dual LDO with Low Noise, Low IQ, and High PSRR
ISL9014IRNFZ , Dual LDO with Low Noise, Low IQ, and High PSRR
ISL90840UIV2027 , Quad Digitally Controlled Potentiometers (XDCP)
ISL90842WIV1427Z , Quad Digitally Controlled Variable Resistors
IRFS4710PBF
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International
OR Rectifier
Applications
High frequency DC-DC converters
Motor Control
Uninterrutible Power Supplies
Lead-Free
Benefits
o Low Gate-to-Drain Charge to Reduce
Switching Losses
o Fully Characterized Capacitance Including
Effective Cogs to Simplify Design, (See
App. Note AN1001)
PD- 95146
lRFB4710PbF
IRFS4710PbF
IRFSL4710PbF
HEXFET® Power MOSFET
RDS(on) max In
0.0149 75A
iii1e_ivr)'i'i'iic,'il, 'i1''i(rr..
0 Fully Characterized Avalanche Voltage 2ti20/13 D2Pak T0262
and Current IRFS4710 IRFSL4710
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 75
ID @ To = 100°C Continuous Drain Current, Vas @ 10V 53 A
IDM Pulsed Drain Current (D 300
Po @TA = 25°C Power Dissipation © 3.8 W
PD @Tc = 25°C Power Dissipation 200
Linear Derating Factor 1.4 W/°C
Ves Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery dv/dt © 8.2 V/ns
To Operating Junction and -55 to + 175
Tsms Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw© 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rout: Junction-to-Case - 0.74
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - °C/W
ReJA Junction-to-Ambient© - 62
RQJA Junction-to-Ambient® - 40
Notes © through © are on page 11
1
04/22/04
IRFB/IRFS/IRFL471OPbF
International
TOR Rectifier
Static © T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Vss = 0V, ID = 250pA
M(BmDSS/ATJ Breakdown Voltage Temp. Coefficient -- 0.11 - V/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance 0.011 0.014 Q Vas = 10V, ID = 45A ©
VGS(th) Gate Threshold Voltage 3.5 - 5.5 V Vos = Vas, ID = 250pA
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 95V, Vas = 0V
- - 250 Vos = 80V, Vas = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
Dynamic Iii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 35 - - S Vos = 50V, ID = 45A
% Total Gate Charge - 110 170 ID = 45A
Qgs Gate-to-Source Charge - 43 - nC VDs = 50V
di Gate-to-Drain ("Miller") Charge - 40 - Vas = 10V,
td(on) Turn-On Delay Time - 35 - VDD = 50V
t, Rise Time - 130 - ns ID = 45A
td(off) Turn-Off Delay Time - 41 - Re = 4.59
if Fall Time - 38 - Vas = 10V ©
Ciss Input Capacitance - 6160 - l/ss = 0V
Coss Output Capacitance - 440 - Vos = 25V
Crss Reverse Transfer Capacitance - 250 - pF f = 1.0MHz
Coss Output Capacitance - 1580 - Vss = 0V, VDs = 1.0V, f = 1.0MHz
Coss Output Capacitance - 280 - Vss = 0V, VDS = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 430 - Vas = 0V, VDs = 0V to 80V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 190 m]
IAR Avalanche Current© - 45 A
EAR Repetitive Avalanche Energy© - 20 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current _ _ 75 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - _ 300 integral reverse G
(Body Diode) coco p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 45A, Vss = 0V GD
trr Reverse Recovery Time - 74 110 ns Tu = 25°C, IF = 45A
Qrr Reverse RecoveryCharge - 180 260 nC di/dt = 1OOA/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
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