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IRFS4321 -IRFS4321TRRPBF
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
PD - 97105C
IRFS4321 PbF
IRFSL4321PbF
Applications HEXFET*) Power MOSFET
0 Motion Control Applications
o High Efficiency Synchronous Rectification in SMPS Voss 150V
It Uninterruptible Power Supply RDS(on) typ. 12mg
q Hard Switched and High Frequency Circuits max. 15mO
Benefits ID 85A co
0 Low RDSON Reduces Losses
0 Low Gate Charge Improves the Switching
Performance D D D
0 Improved Diode Recovery Improves Switching & ',gi,iy
EMI Performance tiji,iic) Rf',
. 30V Gate Voltage Rating Improves Robustness ar l, L s . 's
. Fully Characterized Avalanche SOA G “1 GD GD
s D2Pak TO-S
IRFS4321PbF IRFSL4321PbF
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, Vss @ 10V 85 (D A
ID @ To = 100°C Continuous Drain Current, Vas @ 10V 60
G, Pulsed Drain Current © 330
PD @Tc = 25°C Maximum Power Dissipation 350 W
Linear Derating Factor 2.3 W/°C
Ves Gate-to-Source Voltage t30 V
EAS(Thermallylimi1ed) Single Pulse Avalanche Energy © 120 mJ
TJ Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
RBJC Junction-to-Case © - 0.43* "C/W
ReJA Junction-to-Ambient © - 40
* Rch (end of life) for D2Pak and TO-262 = O.65°CNV. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes co through s are on page 2
1
12/9/10
IRFS_SL4321PbF
International
TOR Rectifier
Static © T J = 25''C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BRmss Drain-to-Source Breakdown Voltage 150 - - V I/ss = 0V, lo = 250pA
AV
RDS(on) Static Drain-to-Source On-Resistance - 12 15 mn Vss = 10V, ID = 33A co
VSS(th) Gate Threshold Voltage 3.0 - 5.0 V Vos = Vas, lo = 250PA
lcss Drain-to-Source Leakage Current - - 20 PA Vos = 150V, Vas = 0V
- - 1.0 mA Vros = 150V, Vss = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
Ream) Internal Gate Resistance - 0.8 - C2
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 130 - - S Vros = 25V, ID = 50A
q, Total Gate Charge - 71 110 no lo = 50A
Qgs Gate-to-Source Charge - 24 - Vos = 75V
di Gate-to-Drain ("Miller") Charge - 21 - Vss = 10V co
tam, Turn-On Delay Time - 18 - ns VDD = 98V
t, Rise Time - 60 - ID = 50A
tam, Turn-Off Delay Time - 25 - Rs = 2.59
t, Fall Time - 35 - Vss = 10V ©
Ciss Input Capacitance - 4460 - pF Vas = 0V
Coss Output Capacitance - 390 - Vos = 50V
Crss Reverse Transfer Capacitance - 82 - f = 1.0MHz
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 85CO A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 330 A integral reverse G
(Body Diode) © p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 50A, Vss = 0V co
t,, Reverse Recovery Time - 89 130 ns lo = 50A
Qrr Reverse Recovery Charge - 300 450 nC l/n = 128V,
Imo, Reverse Recovery Current - 6.5 - A di/dt = 100NUS ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
G) Pulse width S 400ps; duty cycle f 2%.
S Re is measured at To approximately 90''C
OD Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A
© Repetitive rating; pulse width limited by max. junction
temperature.
© Limited by TJmax, starting To = 25°C, L = 0.096mH
Rs = 259, IAS = 50A, Vas =10V. Part not recommended for use
above this value.
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