IRFS3107 ,75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsDV75VDSSHigh Efficiency Synchronous Rectification in SMPSR typ.2.5mDS(on)Uninter ..
IRFS31N20D ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD- 93805BIRFB31N20D IRFS31N20DSMPS MOSFETIRFSL31N20D®HEXFET Power MOSFET
IRFS31N20DPBF ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters200V 0.082Ω 31ABenefitsl Low Gate ..
IRFS31N20DTRLP ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsHEXFET Power MOSFET High Frequency DC-DC converters Lead-FreeV R max IDSS DS(on) D20 ..
IRFS3206 ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageIRFB3206PbFIRFS3206PbFIRFSL3206PbFHEXFET Power MOSFET
IRFS3206TRRPBF ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplications High Efficiency Synchronous RectificationDV 60VDSSin SMPSR typ.2.4m
IRFS3107-IRFSL3107PBF
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International
TOR Rectifier
PD -97144A
llRFS3107PbF
llRFSL3107PbF
HEXFET® Power MOSFET
Ap.litia.e...nf . . . . Voss 75V
0 High Efficiency Synchronous Rectification In SMPS
o Uninterruptible Power Supply R0940") typ. 2dimf2
o High Speed Power Switching max. 3.0mn
q Hard Switched and High Frequency Circuits G ID (Silicon Limited) 230A (O
Benefits lr, (Package Limited) 195A
0 Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness D
0 Fully Characterized Capacitance and Avalanche D
SOA ')eiii),), $3 "s.,
0 Enhanced body diode dV/dt and dl/dt Capability "tft' v! \7 _.S
o Lead-Free l,' s 'GD
D2Pak TO-262
IRFS3107PbF IRFSL3107PbF
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, I/ss @ 10V (Silicon Limited) 2300D
ID @ TC = 100°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 160 A
[D @ To = 25°C Continuous Drain Current, Vas @ 10V (Wire Bond Limited) 195
IDM Pulsed Drain Current © 900
PD ©Tc; = 25°C Maximum Power Dissipation 370 W
Linear Derating Factor 2.5 W/oC
I/ss Gate-to-Source Voltage t 20 V
dv/dt Peak Diode Recovery © 14 V /ns
T, Operating Junction and -55 to + 175
TSTG Storage Temperature Range 0 C
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb-in (1 .1N-m)
Avalanche Characteristics
EAS(Thermawiimited) Single Pulse Avalanche Energy © 300 mJ
IAR Avalanche Current © See Fig. 14, 15, 22a, 22b, A
EAR Repetitive Avalanche Energy S mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJC Junction-to-Case " - 0.40
ReJA Junction-to-Ambient (PCB Mount) ©© - 40 °C/W
1
5/2/11
IRFS/SL3107PbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(Bmss Drain-to-Source Breakdown Voltage 75 - - V I/ss = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.09 - V/°C Reference to 25°C, ID = 5mA©
RDson) Static Drain-to-Source On-Resistance - 2.5 3.0 mo I/ss = 10V, ID = 140A ©
VGSW Gate Threshold Voltage 2.0 - 4.0 V I/os = Vss, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 PA Vos = 75V, Vas = 0V
- - 250 Ihos = 75V, Vss = ov, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
Rs Internal Gate Resistance - 1.2 - C2
Dynamic © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 230 - - S Vos = 50V, lo = 140A
Q, Total Gate Charge - 160 240 nC ID = 140A
Qgs Gate-to-Source Charge - 38 - VDs =38V
di Gate-to-Drain ("Miller") Charge - 54 I/ss = 10V co
stc Total Gate Charge Sync. (Q, - di) - 106 - ID = 140A, VDS =OV, Vss = 10V
tom Turn-On Delay Time - 19 - ns VDD = 49V
t, Rise Time - 110 - ID = 140A
tsom Turn-Off Delay Time - 99 - Rs = 2.79
t, Fall Time - 100 - Vas = 10V co
Ciss Input Capacitance - 9370 - pF Vss = 0V
COSS Output Capacitance - 840 - Vos = 50V
Crss Reverse Transfer Capacitance - 580 - f = 1.0 MHz, See Fig. 5
cu, eff. (ER) Effective Output Capacitance (Energy Related) - 1130 - I/ss = 0V, VDS = 0V to 60V co, See Fig. 11
Coss eff. (TR) Effective Output Capacitance (Time Related)© - 1500 - la, = 0V, l/ns = 0V to 60V ©
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 2300D A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 900 A integral reverse G
(Body Diode) C) p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V T, = 25°C, Is = 140A, Vss = 0V ©
t,, Reverse Recovery Time - 54 - ns TJ = 25°C VF. = 64V,
- 60 - To--- 125°C IF=14OA
0,, Reverse Recovery Charge - 103 - nC TJ = 25°C di/dt = 100A/ps s
- 132 - TJ = 125°C
IRRM Reverse Recovery Current - 3.6 - A T J = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Ci) Calculated continuous current based on maximum allowable junction © ISO C 140A, di/dt g 1380A/ps, VDD s V(BR)DSS, TJ f 175°C.
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
© Repetitive rating; pulse width limited by max. junction
temperature.
© Limited by TJmax, starting T] = 25°C, L = 0.045mH
Rs = 259, MS = 140A, Vas =10V. Part not recommended for use
above this value .
(S) Pulse width f 400ps; duty cycle S 2%.
© Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while Vos is rising from O to 80% Vass.
© Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from O to 80% V933.
When mounted on 1" square PCB (FR-4 or G-1O Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
© Re is measured at To approximately 90°C
& Ras value shown is at time zero.
