IRFU9N20D ,200V Single N-Channel HEXFET Power MOSFET in a I-Pak packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters200V 0.38Ω 9.4ABenefitsl Low Gate ..
IRFU9N20D ,200V Single N-Channel HEXFET Power MOSFET in a I-Pak packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters200V 0.38Ω 9.4ABenefitsl Low Gate ..
IRFUC20 ,600V Single N-Channel HEXFET Power MOSFET in a I-Pak packageapplications.
TO-252AA TO-251AA
Absolute Maximum Ratings
Parameter Max, Units
lo @ To = 25°C Co ..
IRFUC20PBF ,600V Single N-Channel HEXFET Power MOSFET in a I-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount
IRFW510ATM ,100V N-Channel A-FETIRFW/I510AAdvanced Power MOSFET
IRFW520A ,N-CHANNEL POWER MOSFETFEATURESBV = 100 VDSS Avalanche Rugged TechnologyΩR = 0.2DS(on) Rugged Gate Oxide Tec ..
ISL97650 ,4-Channel Integrated LCD SupplyApplicationsoperation over the -40°C to +105°C temperature range.• LCD Monitors (15”+)Pinout• LCD-T ..
ISL97652IRZ , 4-Channel Integrated LCD Supply with Dual VCOM Amplifiers
ISL97653AIRZ-T , 5-Channel Integrated LCD Supply
ISL97656IRTZ , Integrated 4A Switch PWM Step-Up Regulator
ISL97656IRTZ-TK , Integrated 4A Switch PWM Step-Up Regulator
ISL97678IRZ , 8-Channel 45V 50mA LED Driver
IRFR9N20D-IRFU9N20D
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 93919A
International IRFR9N20D
TOR Rectifier SMPS MOSFET IRFU9N20D
HEXFET© Power MOSFET
Applications V R I
0 High frequency DC-DC converters DSS DS(on) max D
200V 0.389 9.4A
Benefits
. Low Gate-to-Drain Charge to Reduce
Switching Losses
0 Fully Characterized Capacitance Including 4it 4it
Effective Coss to Simplify Design, (See s ' l
App. Note AN1001) "s
o Fully Characterized Avalanche Voltage
and Current D-Pak I-Pak
IRFR9N20D IRFU9N20D
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25''C Continuous Drain Current, VGS @ 10V 9.4
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 6.7 A
IDM Pulsed Drain Current C) 38
Pro @Tc = 25°C Power Dissipation 86 W
Linear Derating Factor 0.57 Wl°C
Ves Gate-to-Source Voltage i 30 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range 'C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical SMPS Topologies
0 Telecom 48V input Forward Converter
Notes C) through © are on page 10
1
6/29/00
IRFR9N20D/IRFU9N20D
International
TOR Rectifier
Static @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.23 - Vl°C Reference to 25°C, ID = 1mA ©
Rosom Static Drain-to-Source On-Resistance - - 0.38 n VGS = 10V, ID = 5.6A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.5 V Ws = VGs, ID = 250PA
loss Drain-to-Source Leakage Current - - 25 pA Ws = 200V, VGS = 0V
- - 250 VDs = 160V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
Gate-to-Source Reverse Leakage - - -100 VGS = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 4.3 - - S Ws = 50V, ID = 5.6A
Qg Total Gate Charge - 18 27 ID = 5.6A
Qgs Gate-to-Source Charge - 4.7 7.1 nC Vos = 160V
di Gate-to-Drain ("Miller") Charge - 9.0 14 V63 = 10V, ©
tum”) Turn-On Delay Time - 7.5 - I/oo = 100V
tr Rise Time - 16 - ns ID = 5.6A
td(off) Turn-Off Delay Time - 13 - Rs = 110
t, Fall Time - 9.3 - I/ss = 10V ©
Ciss Input Capacitance - 560 - VGS = 0V
Coss Output Capacitance - 97 - I/os = 25V
Crss Reverse Transfer Capacitance -- 29 -- pF f = 1.0MHz
Coss Output Capacitance - 670 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 40 - VGS = 0V, Vros = 160V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 74 - Vss = 0V, VDs = 0V to 160V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy© - 100 mJ
IAR Avalanche CurrentC) - 5.6 A
EAR Repetitive Avalanche EnergyC) - 8.6 mJ
Thermal Resistance
Parameter Typ. Max. Units
Rauc Junction-to-Case - 1.75
ReJA Junction-to-Ambient (PCB mount)' - 50 °CNV
ReJA Junction-to-Ambient - 110
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 9.4 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - 38 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 5.6A, VGS = 0V ©
tn Reverse Recovery Time - 130 - ns Tu = 25°C, IF = 5.6A
Qrr Reverse RecoveryCharge - 560 - nC di/dt = 1OOA/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
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