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IRFR9214-IRFR9214TR-IRFR9214TRR-IRFU9214
-250V Single P-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR. Rectifier
PD - 9.1658A
IRFR/U9fiy14
PRELIMINARY
HEXFET® Power MOSFET
o P-Channel D
o Surface Mount (IRFR9214) VDss = -250V
0 Straight Lead (IRFU9214)
0 Advanced Process Technology RDs(on) = 3.09
0 Fast Switching G
0 Fully Avalanche Rated ID = -2.7A
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve low
on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, orwave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
TO-252AA TO-251AA
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Veg @ -10V -2.7
ID @ Tc = 100°C Continuous Drain Current, VGS @ -10V -1.7 A
IDM Pulsed Drain Current C) -11
Pro @Tc = 25''C Power Dissipation 50 W
Linear Derating Factor 0.40 W/°C
I/ss Gate-to-Source Voltage i 20 V
We Single Pulse Avalanche Energy© 100 m]
IAR Avalanche Current0) -2.7 A
EAR Repetitive Avalanche Energy© 5.0 rN
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 260 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 2.5
ReJA Junction-to-Ambient (PCB mount)" - 50 "C/W
ReJA Junction-to-Ambient - 1 10
9/23/97
IRFR/U9214
International
TOR Rectifier
Electrical Characteristics @ TJ = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -250 - - V Ves = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - -0.25 - V/°C Reference to 25°C, b = -1mA
RDs(on) Static Drain-to-Source On-Resistance - - 3.0 n VGs = -10V, ID = -1.7A CO
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDs = VGs, ID = -250pA
gig Forward Transconductance 0.9 - - S VDS = -50V, ID = -1.7A
loss Drain-to-Source Leakage Current - - -100 pA VDS = -250V, VGS = 0V
- - -500 VDS = -200V, VGS = 0V, Tu = 150°C
Gate-to-Source Forward Leakage - - 100 VGs = 20V
less Gate-to-Source Reverse Leakage - - -100 nA VGS = -20V
th Total Gate Charge - - 14 ID = -1.7A
Qgs Gate-to-Source Charge - - 3.1 nC VDS = -200V
di Gate-to-Drain ("Miller") Charge - - 6.8 VGS = -10V, See Fig. 6 and 13 ©
tum) Turn-On Delay Time - 11 - VDD = -125V
tr RiseTime - 14 - ns ID = -1.7A
tam) Turn-Off Delay Time - 20 - Re =21 n
tf FaIITime - 17 - RD =70 See Fig. 10 (ir)
. Between lead, D
Lo Internal Drain Inductance - 4.5 - .
nH 6mm (0.25in.) iii/tj-l )
Ls Internal Source Inductance - 7 5 - from package G
. and center of die contacts s
Ciss Input Capacitance - 220 - VGS = 0V
Coss Output Capacitance - 75 - pF VDS = -25V
Crss Reverse Transfer Capacitance - 11 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - -2.7 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - -ll integral reverse G
(Body Diode) O) p-n junction diode. s
I/so Diode Forward Voltage - - -5.8 V Tu = 25°C, Is = -2.7A, VGS = 0V (4)
trr Reverse Recovery Time - 150 220 ns T: = 25°C, IF = -1.7A
Qrr Reverse Recovery Charge - 870 1300 nC di/dt = 100A/ps co
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting Tu = 25°C, L = 27 mH
Re: 250, IAS = -2.7A. (See Figure 12)
© lsro S -2.7A, di/dt f 600A/ps, VDD S 1/(BR)DSS,
TJS150°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
GD Pulse width f 300ps; duty cycles 2%.
SThis is applied for I-PAK, Ls of D-PAK is measured between
lead and center of die contact
