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IRFR9210 from IR,International Rectifier

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IRFR9210

Manufacturer: IR

-200V Single P-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRFR9210 IR 25200 In Stock

Description and Introduction

-200V Single P-Channel HEXFET Power MOSFET in a D-Pak package The IRFR9210 is a P-channel HEXFET Power MOSFET manufactured by International Rectifier (IR). Below are its key specifications, descriptions, and features:

### **Manufacturer:**  
International Rectifier (IR)  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** -100V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Continuous Drain Current (ID):** -5.3A  
- **Pulsed Drain Current (IDM):** -21A  
- **Power Dissipation (PD):** 42W  
- **On-Resistance (RDS(on)):** 0.6Ω (max) at VGS = -10V  
- **Gate Charge (Qg):** 12nC (typical)  
- **Threshold Voltage (VGS(th)):** -2V to -4V  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  

### **Descriptions & Features:**  
- **Advanced HEXFET Technology:** Provides low on-resistance and high efficiency.  
- **Fast Switching:** Optimized for high-speed switching applications.  
- **Avalanche Energy Rated:** Ensures ruggedness in inductive load conditions.  
- **Low Gate Charge:** Reduces drive requirements and improves efficiency.  
- **Fully Characterized:** Includes dynamic and thermal performance specifications.  
- **TO-220AB Package:** Industry-standard package for easy mounting and heat dissipation.  

This MOSFET is commonly used in power management, DC-DC converters, motor control, and other switching applications.  

(Note: Always refer to the official datasheet for precise and updated specifications.)

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