IRFU9210 ,-200V Single P-Channel HEXFET Power MOSFET in a I-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount
IRFU9214 ,-250V Single P-Channel HEXFET Power MOSFET in a I-Pak packagePD - 9.1658AIRFR/U9214PRELIMINARY®HEXFET Power MOSFETl P-Channel DV = -250VDSSl Surface Mount (IRFR ..
IRFU9220PBF ,-200V Single P-Channel HEXFET Power MOSFET in a I-Pak packageapplications.
Absolute Maximum Ratings
lRFU9220
D- PAK
TO-252AA
** When mounted on 1" ..
IRFU9310 ,-400V Single P-Channel HEXFET Power MOSFET in a I-Pak packageapplications. I-Pak D -PakTO-252AA TO-251AAThe D-Pak is designed for surface mounting usingvapo ..
IRFU9N20D ,200V Single N-Channel HEXFET Power MOSFET in a I-Pak packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters200V 0.38Ω 9.4ABenefitsl Low Gate ..
IRFU9N20D ,200V Single N-Channel HEXFET Power MOSFET in a I-Pak packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters200V 0.38Ω 9.4ABenefitsl Low Gate ..
ISL97645AIRZ-TK , Boost VON Slice VCOM
ISL97646IRZ-T , Boost LDO VON Slice VCOM
ISL97650 ,4-Channel Integrated LCD SupplyApplicationsoperation over the -40°C to +105°C temperature range.• LCD Monitors (15”+)Pinout• LCD-T ..
ISL97652IRZ , 4-Channel Integrated LCD Supply with Dual VCOM Amplifiers
ISL97653AIRZ-T , 5-Channel Integrated LCD Supply
ISL97656IRTZ , Integrated 4A Switch PWM Step-Up Regulator
IRFR9210-IRFR9210TR-IRFU9210
-200V Single P-Channel HEXFET Power MOSFET in a D-Pak package
International
1:212 Rectifier
HEXFET® Power MOSFET
P-Channel
Description
The HEXFET technology is the key to International Rectifier’s advanced line
of power MOSFET transistors. The efficient geometry and unique processing
of the HEXFET design achieve very low on-state resistance combined with
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Surface Mount (IRFR9210)
Straight Lead (IRFU9210)
Available in Tape & Reel
Fast Switching
PD-9.521 D
IRFR921O
IRFU921O
VDSS = .-200V
RDS(OH) Cr.. 3.0f2
ID = M.9A
high transconductance and extreme device ruggedness.
The D-Pak is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications, Power dissipation levels up to 15 watts
D-PAK I-PAK
are possible in typical surface mount applications. T0-252AA TO-251AA
Absolute Maximum Ratings
Parameter Max. Units"
Ip, @ Tc = 25°C Continuous Drain Current, Ves © -10 V 1.9
ID © Tc = 100°C Continuous Drain Current, Vas @ -10 V -1J - - A
low: Pulsed Drain Current C) -7.6 a
'i Po © To = 25°C Power Dissipation 25 - -i, .
PD @ TA: 25°C Power Dissipation (PCB Mount)" - 251 - - - _ - - -
Linear Derating Factor 0.20 IN/t
Linear Derating Factor (PCB Mount)" 0.020
VGS Gate-to-Source Voltage i20 V,_
_EAs Single Pulse Avalanche Energy © 300 md
IAR Avalanche ciu_rre_rLt Ir, - __ -1.9 A
EAR Repetitielru_alanchtFnergy C) 2.5 I ml 1
idv/dt Peak Diode Fiettfyrdy/_clt l), - - - - -5.0 I V/ns 1
To, TSTG Junctiorp 1npjitoiisejiyojeiirleriydiie, 7 -55 to +150 i o C I
1Soldering Temperature, for 10 seconds I 260 (1.6mm from case) L
Thermal Resistance
Parameter Min. Typ. Max. units-T
Reds Junction-to-Case - - 5.0 1
ReJA Junction-to-Ambient (PCB mount)" - - 1 50 "C/W
Rm Junction-to-Ambient - - ' 110
** When mounted on l" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRFR9210, IRFU92210
Electrical Characteristics Iii) To = 25°C (unless otherwise specified)
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=-50V, starting TJ=25°C, L=124mH
RG=25§2, |As=-1.9A (See Figure 12)
TJS150°C
Parameter Min, Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -200 - - V I/ss-HN, lD=-250uA
AV(BF|)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.23 - VPC Reference to 25°C, ID=-1mA
Roswn) Static Drain-to-Source On-Resistance - - 8.0 n Vss---10V, b---1,IA ©
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V 1hys=Vss, |o=-250|J.A
gis Forward Transconductance 0.98 - - S Ws=-50V, lD=-1.1A ©
loss Drain-to-Source Leakage Current - - -100 WA VDs=-200V, Vos=OV
- - -500 Vos=-160V. Vss=OV, TJ=125°C
less Gate-to-Source Forward Leakage - - -100 n A Ves=-20V
Gate-to-Source Reverse Leakage - - ' 100 VGs=20V
ch Total Gate Charge - - 8.9 b=-1.3A
Qgs Gate-to-Source Charge - - 2.1 nC VDs=-160V
di Gate-to-Drain ("Miller") Charge - - 3.9 VGs=-10V See Fig. 6 and 13 ©
tum”) Turn-On Delay Time - 8.0 -- VDD=-100V
tr Rise Time - 12 - ns b=-2.3A
td(oti) Turn-Off Delay Time - 1 1 - Rs--24n
t, Fall Time - 13 - RD=41Q See Figure 10 ©
LD Internal Drain Inductance - 4.5 - t'st11eieJ.ltiei.') D
nH from package silt)-;
Ls Internal Source Inductance - 7.5 - and center 6f E3
die contact s
Ciss Input Capacitance - 170 - VGs=0V
Coss Output Capacitance -.. 54 - pF VDs=-25V
Crss Reverse Transfer Capacitance - 16 - , f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - -1 9 MOSFET symbol D
(Body Diode) . A showing the 21r)
ISM Pulsed Source Current - - -7 6 integral reverse G l .
(Body Diode) C) . p-n junction diode. s
Vso Diode Forward Voltage --. - -5.8 V TJ=25°C, ls=-1.9A, Var--.0V (ii)
tn Reverse Recovery Time _......- 110 220 ns TJ=25°C, |F=-2.3A
Q" Reverse Recovery Charge - 0.56 1.1 wc dildt=1OOA/us ©
' ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Lsrluo)
Notes:
© ISDS-1.9A, di/dtS7OA/ps, VDDSV(BR)Dss,
(E) Pulse width f 300 ps; duty cycle 32%.
