IRFU9120NPBF ,-100V Single P-Channel HEXFET Power MOSFET in a I-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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International
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Absolute Maximum Ratings
lRFU9220
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IRFR9120N-IRFR9120NPBF-IRFR9120NTR-IRFU9120N-IRFU9120NPBF
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
PD - 9.1507A
|RFR/U9120N
Ultra Low On-Resistance
P-Channel
Surface Mount (|RFR9120N)
Straight Lead (IRFU9120N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
PRELIMINARY
HEXFET® Power MOSFET
VDSS = -100V
l RDS(on) = 0.489
ID = -6.6A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This beneht,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety ofapplications.
The D-Pak is designed for surface mounting using vapor TO-252AA T0-251AA
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25''C Continuous Drain Current, VGS @ -10V -6.6
ID @ To = 100°C Continuous Drain Current, Vss @ -10V -4.2 A
IDM Pulsed Drain Current C) -26
Pr, @Tc = 25°C Power Dissipation 40 W
Linear Derating Factor 0.32 WI°C
VGS Gate-to-Source Voltage l 20 V
EAS Single Pulse Avalanche Energy© 100 ml
IAR Avalanche Current© -6.6 A
EAR Repetitive Avalanche Energy© 4.0 mJ
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
T J Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, tor 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Raoc Junction-to-Case - 3.1
ReJA Junction-to-Ambient (PCB mount)" - 50 “CW
ReJA Junction-to-Ambient - 1 10
3/16/98
IRFR/U9120N
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
International
TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 - - V VGS = 0V, ID = -250pA
M(BRmss/ATJ Breakdown Voltage Temp. Coefficient - -0.11 - V/°C Reference to 25°C, ID = -1mA
Rosom Static Drain-to-Source On-Resistance - - 0.48 n VGs = -10V, ID = -3.9A ©
VGsan) Gate Threshold Voltage -2.0 - -4.0 V Vros = VGs, ID = -250pA
gfs Forward Transconductance 1.4 - - S Vros = -50V, ID = -4.0A©
loss Drain-to-Source Leakage Current - - -25 pA VDS = -100V, VGS = 0V
- - -250 VDS = -80V, VGs = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -100 VGs = -20V
% Total Gate Charge - - 27 lo = -4.0A
Qgs Gate-to-Source Charge - - 5.0 nC Vros = -80V
di Gate-to-Drain ("Miller") Charge - - 15 VGS = -1OV, See Fig. 6 and 13 Cot)
tam) Turn-On Delay Time - 14 - VDD = -50V
tr RiseTime - 47 - ns ID = -4.OA
tum) Turn-Off Delay Time - 28 - Rs = 12 Q
If FallTime - 31 - RD =12 n, See Fig. 10 ©©
LD IntemaIDrainlnductance - 4.5 - Between taf,
nH 6mm (0.25in.)
from package
Ls Internal Source Inductance - 7.5 - and center of die contacts
Ciss Input Capacitance - 350 - VGs = 0V
Cass Output Capacitance - 110 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 70 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - - 6 6 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - -26 integral reverse G
(Body Diode) C) p-n junction diode. S
Van Diode Forward Voltage - - -1.6 V To = 25°C, Is = -3.9A, VGs = 0V ©
trr Reverse Recovery Time - 100 150 ns To = 25°C, IF = -4.0A
Qrr Reverse Recovery Charge - 420 630 nC di/dt = 100Alps Coco
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L3+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11 )
© Starting TJ = 25°C, L =13mH
Rs = 259, IAS = -3.9A. (See Figure 12)
© '80 f -4.0A, di/dt S 300A/ps, VDD S V(BR)oss,
TJs150°C
** When mounted on 1" square PCB (FR-4 or G-IO Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
© Pulse width S 300ps; duty cycle S 2%.
©This is applied for I-PAK, Ls of D-PAK is measured between
lead and center of die contact
© Uses IRF9520N data and test conditions.
