IRFU9110 ,-100V Single P-Channel HEXFET Power MOSFET in a I-Pak packagePD-9.519E
International
1:212 Rectifier |RFR91 1O
HEXFET% Power MOSFET I IR FU 91 1 O
. D ..
IRFU9110PBF , Dynamic dV/dt Rating
IRFU9120 ,5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETsPD-9.520D
International
1:912 Rectifier IRFR9120
HEXFET® Power MOSFET IR FU 91 20
q Dynam ..
IRFU9120N ,-100V Single P-Channel HEXFET Power MOSFET in a I-Pak packageapplications. Power dissipation levels up to 1.5 watts arepossible in typical surface mount
IRFU9120NPBF ,-100V Single P-Channel HEXFET Power MOSFET in a I-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFU9120PBF ,-100V Single P-Channel HEXFET Power MOSFET in a I-Pak packagePD-9.520D
International
1:912 Rectifier IRFR9120
HEXFET® Power MOSFET IR FU 91 20
q Dynam ..
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IRFR9110-IRFR9110TR-IRFR9110TRL-IRFU9110
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package
International
1h0R Rectifier
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
tt Repetitive Avalanche Rated
o Surface Mount (IRFR9110)
o Straight Lead (lFlFU9110)
0 Available in Tape & Reel
0 P-Channel
0 Fast Switching
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
PD-9.519E
|RFR911O
llRFU9110
Voss---""
RDS(on) = 1.29
|D=-3.1A
on-resistance and cost-effectiveness.
The D-Pak is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications. D-PAK I-PAK
TO-252AA TO-251AA
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, l/ss © -10 V -3.1
Io @ Tc = 100°C Continuous Drain Current, I/ss @ -10 V -2.0 A
IDM Pulsed Drain Current CO -12
Po @ Tc = 25°C Power Dissipation 25 W
Po @ TA: 25°C Power Dissipation (PCB Mount)" 2.5
Linear Derating Factor 0.20 W PC)
Linear Derating Factor (PCB Mount)" 0.020
Ves Gate-to-Source Voltage 1:20 V
EAs Single Pulse Avalanche Energy C2) 140 mJ
IAR Avalanche Current co -3.1 A
EAR Repetitive Avalanche Energy C) 2.5 mJ
dv/dt Peak Diode Recovery dv/dt © -5.5 V/ns
TJ, Tsrs Junction and Storage Temperature Range -55 to +150 "C
Soldering Temperature, for 10 seconds 260 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - - 5.0
ReJA Junction-to-Ambient (PCB mount)" - - 50 °C/W
Ram Junction-to-Ambient - - 1 1 O
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
f,' tu.
TIFR9110, lRFU9110
Electrical Characteristics tii) Tg = 25°C (unless otherwise specified)
(I) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=-25V, starting TJ=25°C, L=21mH
Re=25f2, IAS=-3.1A (See Figure 12)
Parameter Min. Typ, Max. Units Test Conditions
V(an)oss Drain-to-Source Breakdown Voltage -100 ...-- - V Vss=0V, ID=-250uA-
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.093 - V/°C Reference to 25°C, lo=-1mA
Ros(on) Static Drain-to-Source On-Resistance - - 1.2 Q Vss=-10V, |D=m
Vesun) ' Gate Threshold Voltage -2.0 - -4.0 v VDs=Vss, ID=-2EouA
gfs Forward Transconductance 0.97 - - S VDs=-50V, lo=-1.9A (ii)
_ loss Drain-to-Source Leakage Current - 1 - -100 11A Vos=-100V, Vas---0V
- l - Ai00 Vos=-80V, Ves=0V, TJ=125°C
less Gate-to-Source Forward Leakage - I - -100 n A VGs=-2OV
Gate-to-Source Reverse Leakage - - 100 1/cs=20V
Qg Total Gate Charge - - 8.7 |D=-4.0A
Qgs Gate-to-Source Charge - - 2.2 nC Vos=-80V
di Gate-to-Drain ("Miller") Charge - - 4.1 Vas---ft7V See Fig. 6 and 13 (i)
tum) Turn-On Delay Time - 10 - , Voo=-50V
tr Rise Time - 27 - ns |o=-4.0A
tam) Turn-Off Delay Time - 15 - Re=24£2
t1 Fall Time - 17 - _Ro=11Q SetFi-gu,re 10 ©
Lo Internal Drain Inductance - 4.5 - it,'tf"i'on.ltie.')" (iiiiji,
nH from package GAL] )
Ls Internal Source Inductance - 7.5 - Ind center 6f
die contact s
Cass Input Capacitance - 200 - Vss---01/
Coss Output Capacitance - 94 - pF VDs=-25v
Crss Reverse Transfer Capacitance - 18 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current _ - -3 1 MOSFET symbol D
(Body Diode) . A showing the 'c-I,,
ISM Pulsed Source Current -. - -1 2 integral reverse G CL“
(Body Diode) co p-n junction diode. s
Vso Diode Forward Voltage - - -5.5 V TJ=25°C, Is=-3.1A, Ves=0V ©
tn Reverse Recovery Time - 80 160 ns TJ=25°C, IF=-4.OA
G, Reverse Recovery Charge - 0.17 0.30 no di/dt=100A/us ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
© Isos-4.0A, di/dts75A/ps, VDDSV(BR)Dss,
TJS1 50°C
© Pulse width S. 300 us; duty cycle S2%.
