IRFR9024NPBF ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packagePD - 9.1506IRFR/U9024NPRELIMINARY®HEXFET Power MOSFETl Ultra Low On-ResistanceDl P-ChannelV = -55VD ..
IRFR9024NTR ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR9024NTRRPBF ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageInternational
TOR Rectifier1
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"''ljlfra Low On-Resistance
P-Channel
Surface Mount ..
IRFR9024PBF , HEXFET POWER MOSFET ( VDSS = -60V , RDS(on) = 0.28Ω , ID = -8.8A )
IRFR9024TR ,-60V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D-PAK LPAK
TO-252AA TO-251AA
Absolute Maximum Ratings
Parameter Max. Units
ID @ T ..
IRFR9024TR ,-60V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D-PAK LPAK
TO-252AA TO-251AA
Absolute Maximum Ratings
Parameter Max. Units
ID @ T ..
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IRFR9024N-IRFR9024NPBF-IRFR9024NTR-IRFU9024N-IRFU9024NPBF
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
PD - 9.1506
IRFR/U9024N
International
TOR. Rectifier
PRELIMINARY
HEXFET® Power MOSFET
0 Ultra Low On-Resistance D
o P-Channel VDSS = -55V
o Surface Mount(lRFR9024N)
o StraightLead (IRFU9024N) V RDS n = 01759
o Advanced Process Technology G _ _ (o )
0 Fast Switching -
o Fully Avalanche Rated s ko - IIA
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The D-Pak is designed for surface mounting using TO-25a2AA TO-251AA
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Veg @ -10V -11
ID @ Tc = 100°C Continuous Drain Current, VGS @ -10V -8 A
IDM Pulsed Drain Current C) -44
Pro @Tc = 25''C Power Dissipation 38 W
Linear Derating Factor 0.30 W/°C
I/ss Gate-to-Source Voltage i 20 V
We Single Pulse Avalanche Energy© 62 m]
IAR Avalanche Current0) -6.6 A
EAR Repetitive Avalanche Energy© 3.8 rN
dv/dt Peak Diode Recovery dv/dt © -10 V/ns
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 3.3
ReJA Junction-to-Ambient (PCB mount)" - 50 "C/W
ReJA Junction-to-Ambient - 1 10
6/26/97
IRFR/U9024N International
TOR Rectifier
Electrical Characteristics @ TJ = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 - - V VGS = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - -0.05 - V/°C Reference to 25°C, b = -1mA
RDs(on) Static Drain-to-Source On-Resistance - - 0.175 n VGs = -10V, ID = -6.6A CO
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDs = VGs, ID = -250pA
gig Forward Transconductance 2.5 - - S VDS = -25V, ID = -7.2A©
loss Drain-to-Source Leakage Current - - -25 pA VDS = -55V, VGS = 0V
- - -250 VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage - - 100 VGs = 20V
less Gate-to-Source Reverse Leakage - - -100 nA VGS = -20V
th Total Gate Charge - - 19 ID = -7.2A
Qgs Gate-to-Source Charge - - 5.1 nC VDS = -44V
di Gate-to-Drain ("Miller") Charge - - 10 VGS = -10V, See Fig. 6 and 13 ©©
tum) Turn-On Delay Time - 13 - VDD = -281/
tr RiseTime - 55 - ns ID = -7.2A
tam) Turn-Off Delay Time - 23 - Re = 24n
tf FaIITime - 37 - RD = 3.79, See Fig. 10 @©
. Between lead, D
Lo Internal Drain Inductance - 4.5 - .
nH 6mm (0.25in.) iii/tj-l )
from package G
Ls Internal Source Inductance - 7.5 - and center of die contacts S
Ciss Input Capacitance - 350 - VGs = 0V
Coss Output Capacitance - 170 - pF VDS = -25V
Crss Reverse Transfer Capacitance - 92 - f = 1.0MHz, See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - -ll MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - -44 integral reverse G
(Body Diode) O) p-n junction diode. s
I/so Diode Forward Voltage - - -1.6 V Tu = 25°C, Is = -7.2A, VGS = 0V (4)
trr Reverse Recovery Time - 47 71 ns T: = 25°C, IF = -7.2A
Qrr Reverse Recovery Charge - 84 130 nC di/dt = 100A/ps Chi))
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by © Pulse width f 300ps; duty cycle s: 2%.
max. junction temperature. ( See fig. 11 ) ©This is applied for l-PAK, LS of D-PAK is measured between
© Starting Tu = 25°C, L = 2.8mH lead and center of die contact
Re: 259, IAS = -6.6A. (See Figure 12) . .
© ISO S -6.6A, di/dt S 240A/ps, VDD S 1/(BR)DSS, © Uses IRF9Z24N data and test conditions.
T: S 150°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
