IRFR6215TRLPBF ,-150V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR6215TRPBF , 175°C Operating Temperature
IRFR825TRPBF , ZERO VOLTAGE SWITCHING SMPS
IRFR9014 ,-60V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications.
Absolute Maximum Ratings
|RFU9014
D- PA K
TO-252AA
I-PAK
TO-251AA
Pa ..
IRFR9014TR ,-60V Single P-Channel HEXFET Power MOSFET in a D-Pak packageIntergatipytl
TOR Rectifier
PD-9.654A
IRFR9014
HEXFET% Power MOSFET
. Dynamic dv/dt Ra ..
IRFR9020 ,REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
ISL8491IP ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications not requiring Rx and Tx output disable functions (e.g., point-to-point). Half duplex c ..
ISL8499IRZ-T ,Ultra Low ON-Resistance, +1.65V to +4.5V, Single Supply, Quad SPDT (Dual DPDT) Analog SwitchElectrical Specifications - 4.3V Supply Test Conditions: V+ = +3.9V to +4.5V, GND = 0V, V = 1.6V, V ..
ISL8499IVZ ,Ultra Low ON-Resistance, +1.65V to +4.5V, Single Supply, Quad SPDT (Dual DPDT) Analog SwitchApplicationsISL8499• Battery Powered, Handheld, and Portable EquipmentNumber of Switches 4- Cellula ..
ISL85402IRZ , 2.5A Regulator with Integrated High-Side MOSFET for Synchronous Buck or Boost Buck Converter
ISL8560IRZ , DC/DC Power Switching Regulator Voltage feedforward mode
ISL8563CP ,+3V to +5.5V/ 1Microamp/ 250kbps/ EIA/TIA-562/ EIA/TIA-232 Transmitters/ReceiversFEATURESel,NO. OF DATA MANUAL AUTOMATICPART NO. OF NO. OF MONITOR Rx. RATE Rx. ENABLE READY POWER- ..
IRFR6215TRLPBF
-150V Single P-Channel HEXFET Power MOSFET in a D-Pak package
PD-95080A
Internaticna IRFR6215PbF
Tart, Rectifier IRFU6215PbF
HEXFET® Power MOSFET
o P-Channel
o 175°C Operating Temperature
. Surfece Mount (IRFR6215) VDss = -150V
q Straight Lead (IRFU6215)
o Advanced Process Technolo
. . gy l V RDS(on) = 0.295Q
0 Fast Switching G
o Fully Avalanche Rated I - 13A
q Lead-Free s D - -
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications. '
. . . . D-PAK l-PAK
The D-PAK IS designed for surface mounting usmg TO-252AA TO-251AA
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V -13
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V -9.0 A
IDM Pulsed Drain Current ©© -44
Pro @Tc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
VGS Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy©© 310 mJ
IAR Avalanche CurrentO© -6.6 A
EAR Repetitive Avalanche Energy0)© 11 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1 .4
ReJA Junction-to-Ambient (PCB mount) ** - 50 "CA/V
RQJA Junction-to-Ambient - 110
1
12/14/04
IRFR/U6215PbF International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -150 - - V VGS = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - -0.20 - V/°C Reference to 25°C, ID = -1mA
. . . - - 0.295 Vss = -1OV, ID = -6.6A (D
RDS(on) Static Drain-to-Source On-Resistance - - 0.58 Q I/ss = -10V, ID = -6.6 A C4DTo = 150°C
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V I/ns = VGs, ID = -250pA
gfs Forward Transconductance 3.6 - - S Vros = -50V, ID = -6.6ACO
loss Drain-to-Source Leakage Current - - 22550 pA x3: "='" jggx‘ [it, , g, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
09 Total Gate Charge - - 66 ID = -6.6A
Qgs Gate-to-Source Charge - - 8.1 nC Vros = -120V
di Gate-to-Drain ("Miller") Charge - - 35 V93 = -10V, See Fig. 6 and 13 (9(6)
td(on) Turn-On Delay Time - 14 - Voc, = -75V
t, Rise Time - 36 - ns ID = -6.6A
tam) Turn-Off Delay Time - 53 - Rs = 6.89
" Fall Time 37 RD = 129, See Fig. 10 (989
Lo Internal Drain Inductance - 4.5 - H Eztgizrfzgeiii' D
n from package G )
Ls Internal Source Inductance - 7.5 - and center of die contacts S
Ciss Input Capacitance - 860 - VGS = 0V
Coss Output Capacitance - 220 - pF Vros = -25V
Crss Reverse Transfer Capacitance - 130 - f = 1.0MHz, See Fig. 563
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - -1 3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) coco - - -44 p-n junction diode. s
I/so Diode Forward Voltage - - -1.6 V To = 25°C, Is = -6.6A, l/ss = 0V (D
tn Reverse Recovery Time - 160 240 ns To = 25°C, IF = -6.6A
Qrr Reverse RecoveryCharge - 1.2 1.7 pC di/dt = 100A/ps ©©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
OD Repetitive rating; pulse width limited by G) Pulse width S 300ps; duty cycle 5 2%
max. junction temperature. (See fig. 11 )
© Starting TJ = 25°C, L = 14mH co This is applied for I-PAK, LS of D-PAK is measured between lead and
Rs = 259, 'As = -6.6A. (See Figure 12) center of die contact
© la, s-6.6A, di/dt S -620A/ps, VDD S V(BR)ross, © Uses IRF6215 data and test conditions
T J f 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material )
For recommended footprint and soldering techniques refer to application note #AN-994
2
