IRFR5505GTRPBF ,-55V Single P-Channel HEXFET Power MOSFET in a Halogen Free Lead Free D-Pak package'TJirra Low On-Resistance
P-Channel
Surface Mount (IRFR5505)
Straight Lead (|RFU5505)
Advance ..
IRFR5505PBF ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR5505TR ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts arepossible in typical surface mount
IRFR5505TRRPBF ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Powert
possible in typical SUIAbsolute Maximum Ratings
Parameter Max. Units
ID ..
IRFR6215 ,-150V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR6215PBF ,-150V Single P-Channel HEXFET Power MOSFET in a D-Pak packagePD - 91749IRFR/U6215PRELIMINARY®HEXFET Power MOSFETl P-ChannelDl 175°C Operating TemperatureV = -15 ..
ISL8489IP ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversFeaturesLimited, RS-485/RS-422 Transceivers• Specified for 10% Tolerance SuppliesThe Intersil RS-48 ..
ISL8489IP ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications. The ISL8488 and • Factory AutomationISL8490 are offered in space saving 8 lead packag ..
ISL8490IB ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversFeaturesLimited, RS-485/RS-422 Transceivers• Specified for 10% Tolerance SuppliesThe Intersil RS-48 ..
ISL8490IP ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications not requiring Rx and Tx output disable functions (e.g., point-to-point). Half duplex c ..
ISL8491EIB ,+-15kV ESD protected, 5V, low power, high speed and slew rate limited, full duplex, RS-485/RS-422 transceiver.applications, so they are ideal for -250µA (ISL8491E)RS-422 networks requiring high ESD tolerance o ..
ISL8491EIBZ ,+-15kV ESD protected, 5V, low power, high speed and slew rate limited, full duplex, RS-485/RS-422 transceiver.FeaturesHigh Speed and Slew Rate Limited, Full • RS-485 I/O Pin ESD Protection . . . . . . . . . . ..
IRFR5505GTRPBF
-55V Single P-Channel HEXFET Power MOSFET in a Halogen Free Lead Free D-Pak package
PD - 96182
International
Tart, RGCHHGF IRFR5505GPbF
|RFU5505GPbF
Surface Mount (IRFR5505) D
Straight Lead (|RFU5505)
Advanced Process Technology
Fast Switching G
Fully Avalanche Rated
Lead-Free S
Halogen-Free
VDSS = -55V
RDS(on) = 0.119
ID: -18A
Description
Fifth Generation HEXFEI'S from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance persilicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFEI'S are well
known for, provides the designerwith an extremely efficient ’S . 'S
and reliable device for use in a wide variety of applications G 'GD
The D-Pak is designed for surface mognting using vapor D-Pak l-Pak
phase, Infrared, 1ryyave.solPyirottchnicruts. The straight IRFR5505GPbF IRFU5505GPbF
lead versuon (IRFL) series) Is tor through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID tl) TC = 25°C Continuous Drain Current, Veg tp -10V -18
ID @ Tc = 100°C Continuous Drain Current, V93 tp -10V -11 A
IDM Pulsed Drain Current G) -64
PD @Tc = 25''C Power Dissipation 57 W
Linear Derating Factor 0.45 WPC
Veg Gate-to-Source Voltage , 20 V
EAS Single Pulse Avalanche Energy0) 150 md
IAR Avalanche Current0) -9.6 A
EAR Repetitive Avalanche Energy0) 5.7 md
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rm Junction-to-Case - 2.2
RQJA Junction-to-Ambient (PCB mount)" - 50 ''C/W
RQJA Junction-to-Ambient - 110
1
09/29/08
IRFR/U5505GPbF
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
VeRVss Drain-to-Source Breakdown Voltage -55 - - V Veg = OV, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. CoetMient - -0.049 - I/fC Reference to 25"C, ID = -1mA
RDS(0n) Static Drain-toSource On-Resistance - - 0.11 n Veg = ..10V, ID = -9.6A G)
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V I/ce = Veg. ID = -250pA
gtt Forward Transconductance 4.2 - - S Ws = -25V, ID = -9.6A
loss Drain-to-S- Leakage Current - - -25 HA Ws = -55V, Vos = 0V
- - -250 Ws = -44V, Veg = OV, TJ = 150°C
less Gate-to-Source Forward Leakage - - -100 n A Veg = 20V
Gate-to-Source Reverse Leakage - - 100 Ws = -20V
09 Total Gate Charge - - 32 ID = -9.6A
Qgs Gate-to-Source Charge - - 7.1 nC Vce = -44V
di Gate-tty4hain ("Miller") Charge -- - 15 Vss = -10V, See Fig. 6 and 13 @
td(on) Tum-On Delay Time - 12 - VDD = -28V
tr Rise Time - 28 - ns ID = -9.6A
td(off) Turn-Off Delay Time - 20 - Ro = 2.69
t, Fall Time - 16 - RD = 2.89, See Fig. 10 G)
. Between lead, D
k Internal Drain Inductance - 4 5 - 6mm ( 0. 25in.) £3)
from package C) a
Ls Internal Source Inductance - 7.5 - and center of die contacts S
055 Input Capacitance - 650 - Ws = ov
Coss Output Capacitance - 270 - pF VDS = -25V
Crss Reverse Transfer Capacitance - 120 - f = 1.0MHa, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - -- -18 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse 6
(Body Diode) (O - - -64 p-n junction diode. S
l/sc) Diode Forward Voltage - - -1.6 V Tu = 25''C, IS = -9.6A Vas = 0V G)
trr Reverse Recovery Time - 51 77 ns Tu = 25''C, IF = -9.6A
er Reverse RecoveryCharge - 110 160 nC di/dt = 100A/ps 69
ton Forward Turn-On Time Intrinsic turn-m time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting Tu-- 25°C, L = 3.2mH
Rs = 25f2, lps = -9.6A. (See Figure 12)
© ISC) 5-9.6A. di/dt s 290A/ps, Mor) S V(BRVss,
TJS 150°C
" When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniqu es refer to application note #AN-994
C4) Pulse width S 300ps; duty cycle S 2%.
©This is applied for l-PAK. Ls of D-PAK is measured between
lead and center of die contact
