IRFR5410TRR ,-100V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR5505 ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications. I-Pak D -PakThe D-Pak is designed for surface mounting using vapor TO-252AA TO-25 ..
IRFR5505GTRPBF ,-55V Single P-Channel HEXFET Power MOSFET in a Halogen Free Lead Free D-Pak package'TJirra Low On-Resistance
P-Channel
Surface Mount (IRFR5505)
Straight Lead (|RFU5505)
Advance ..
IRFR5505PBF ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR5505TR ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts arepossible in typical surface mount
IRFR5505TRRPBF ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Powert
possible in typical SUIAbsolute Maximum Ratings
Parameter Max. Units
ID ..
ISL8489IB ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversFeaturesLimited, RS-485/RS-422 Transceivers• Specified for 10% Tolerance SuppliesThe Intersil RS-48 ..
ISL8489IP ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversFeaturesLimited, RS-485/RS-422 Transceivers• Specified for 10% Tolerance SuppliesThe Intersil RS-48 ..
ISL8489IP ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications. The ISL8488 and • Factory AutomationISL8490 are offered in space saving 8 lead packag ..
ISL8490IB ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversFeaturesLimited, RS-485/RS-422 Transceivers• Specified for 10% Tolerance SuppliesThe Intersil RS-48 ..
ISL8490IP ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications not requiring Rx and Tx output disable functions (e.g., point-to-point). Half duplex c ..
ISL8491EIB ,+-15kV ESD protected, 5V, low power, high speed and slew rate limited, full duplex, RS-485/RS-422 transceiver.applications, so they are ideal for -250µA (ISL8491E)RS-422 networks requiring high ESD tolerance o ..
IRFR5410-IRFR5410TR-IRFR5410TRR-IRFU5410
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package
PD - 9.1533A
International
TOR Rectifier IR‘R/U541 0
HEXFET© Power MOSFET
q Ultra Low On-Resistance
O P-Channel D VDSS = -100V
q Surface Mount (IRFR5410)
q Straight Lead (IRFU5410) =
0 Advanced Process Technology G : V RDS(on) 02059
q Fast Switching -
. Fully Avalanche Rated s 'D - -13A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, providesthe designerwith an extremely efficient
and reliable device for use in a wide variety of applications.
D-Pak l-Pak
The D-Pak is designed for surface mounting using vapor TO-252AA T0-251AA
phase, infrared, orwave solderingtechniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, l/ss @ -10V -13
ID @ Tc = 100''C Continuous Drain Current, VGS @ -10V -8.2 A
IDM Pulsed Drain Current C) -52
PD @Tc = 25°C Power Dissipation 66 W
Linear Derating Factor 0.53 W/“C
Ves Gate-to-Source Voltage i 20 V
Eps; Single Pulse Avalanche Energy© 194 tttl
IAR Avalanche Current© -8.4 A
EAR Repetitive Avalanche Energy© 6.3 mJ
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range (
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1 .9
Ras Junction-to-Ambient (PCB mount)" - 50 "CM/
Ram Junction-to-Ambient - 1 1O
1
5/3/99
IRFR/U541O International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 - - V l/ss = 0V, lo = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - -0.12 - V/°C Reference to 25''C, ID = -1.0mA
RDs(on) Static Drain-to-Source On-Resistance - - 0.205 C2 Vss = -1OV, ID = -7.8A (D
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V I/ross = VGS, ID = -250pA
git Forward Transconductance 3.2 - - S I/ns = -50V, ID = -7.8A
bss Drain-to-Source Leakage Current - - -25 pA Vos = -100V, VGS = 0V
- - -250 VDS = -80V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
tk Total Gate Charge - - 58 ID = -8.4A
Qgs Gate-to-Source Charge - - 8.3 nC l/ns = -80V
di Gate-to-Drain ("Miller") Charge - - 32 VGS = -10V, See Fig. 6 and 13 ©©
td(on) Turn-On Delay Time - 15 - VDD = 50V
t, Rise Time - 58 - ID = -8.4A
tdm Turn-oft Delay Time - 45 - ns Rs = 9.19
tf FallTime - 46 - RD =6.2f2, See Fig. 10 C96)
LD Internal Drain Inductance - 4.5 - Between léad, D
nH 6mm (0.25in.) E )
from package G
Ls Internal Source Inductance - 7.5 - and center of die contacts S
Ciss Input Capacitance - 760 - Vss = 0V
Coss Output Capacitance - 260 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 170 - I = 1.0MHz, See Fig. 5@
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - _ -1 3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - -52 p-n junction diode. S
Vso Diode Forward Voltage - - -1.6 V Tu = 25°C, Is = -7.8A, Ves = 0V (D
t” Reverse Recovery Time - 130 190 ns Tu = 25°C, IF = -8.4A
Qrr Reverse Recovery Charge - 650 970 nC di/dt = 100A/ps ©©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls+LD)
Notes:
(O Repetitive rating; pulse width limited by © Pulse width f 300ps; duty cycle f 2%.
max. junction temperature. ( See fig. 11 ) SThis is applied for I-PAK, Ls of D-PAK is measured between
© Starting Tu = 25''C, L = 6.4mH lead and center of die contact
Ro = 259, IAS-- -7.8A. (See Figure 12) ...
© ISD f -7.8A, di/dt f 200A/ps, VDD S V(BR)DSS, © Uses IRF9530N data and test conditions.
Tu 3 150°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
