IRFU430APBF ,500V Single N-Channel HEXFET Power MOSFET in a I-Pak packagePD - 94356ASMPS MOSFETIRFR430AIRFU430A
IRFU430APBF ,500V Single N-Channel HEXFET Power MOSFET in a I-Pak packageApplications ®HEXFET Power MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power SupplyV R ..
IRFU4615PBF ,150V Single N-Channel HEXFET Power MOSFET in a I-Pak packageApplicationsHigh Efficiency Synchronous Rectification in SMPSR typ.34m
IRFR430A-IRFR430APBF-IRFU430A-IRFU430APBF
500V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
Tart, Rectifier
Applications
0 Switch Mode Power Supply (SMPS)
SMPS MOSFET
PD - 94356A
IRFR430A
IRFU430A
HEXFET© Power MOSFET
o Uninterruptible Power Supply Voss RDS(on) max ID
. High speed power switching 500V 1 7g 5 0A
Benefits
q Low Gate Charge Qg results in Simple
Drive Requirement 4y
q Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
q Fully Characterized Capacitance and
Avalanche Voltage and Current D-Pak l-Pak
q Effective Coss specified (See AN 1001) IRFR430A IRFU430A
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Ves @ 10V 5.0
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 3.2 A
G, Pulsed Drain Current C) 20
PD @Tc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.91 W/''C
l/ss Gate-to-Source Voltage * 30 V
dv/dt Peak Diode Recovery dv/dt © 3.0 V/ns
T: Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Avalanche Characteristics
Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy© - 130 mJ
IAR Avalanche Current© - 5.0 A
EAR Repetitive Avalanche Energy© - 11 mJ
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1.1
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °CNV
' Junction-to-Ambient - 62
1
02/26/002
IRFR430A/IRFU430A
International
TOR Rectifier
Static til T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V Ves = 0V, ID = 250uA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.60 - V/°C Reference to 25°C, ID = 1mA
Rrosom Static Drain-to-Source On-Resistance - - 1.7 Q VGS = 10V, ID = 3.0A ©
VGsoh) Gate Threshold Voltage 2.0 - 4.5 V Ws = VGS, ID = 250PA
loss Drain-to-Source Leakage Current - - 25 pA Vros = 500V, VGS = 0V
- - 250 VDs = 400V, Vss = 0V, To = 125°C
I Gate-to-Source Forward Leakage - - 100 n A l/ss = 30V
GSS Gate-to-Source Reverse Leakage - - -100 VGS = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 2.3 - - S Vos = 50V, ID = 3.0A
09 Total Gate Charge - - 24 ID = 5.0A
Qgs Gate-to-Source Charge - - 6.5 nC Vros = 400V
di Gate-to-Drain ("Miller") Charge - - 13 I/ss = 10V, See Fig. 6 and 13 G)
tum”) Turn-On Delay Time - 8.7 - VDD = 250V
tr Rise Time - 27 - ns ID = 5.0A
tam) Turn-Off Delay Time - 17 - Rs = 159
tr Fall Time - 16 - Ro = 5OQ,See Fig. 10 ©
Ciss Input Capacitance - 490 - N/ss = 0V
Coss Output Capacitance - 75 - Vros = 25V
Crss Reverse Transfer Capacitance - 4.5 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 750 - VGs = 0V, VDS = 1.0V, f = 1.0MHz
Cass Output Capacitance - 25 - VGs = 0V, VDs = 400V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 51 - l/ss = 0V, Vos = 0V to 400V (O
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 5 0 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - 20 p-n junction diode. s
Vso Diode Forward Voltage - - 1.5 V TJ = 25°C, IS = 5.0A, VGS = 0V ©
trr Reverse Recovery Time - 410 620 ns To = 25°C, IF = 5.0A
G, Reverse RecoveryCharge - 1.4 2.1 pC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by © Pulse width S 300ps; duty cycle f 2%.
max. junction temperature. ( See fig. 11 )
© Starting TJ = 25°C, L = 11mH
Rs = 259,
© Iso S 5.0A,
IAs = 5.0A. (See Figure 12)
di/dt s 320Nps, VDD S V(BR)ross,
Tos: 150°C.
s Coss eff. is a fixed capacitance that gives the same charging time
as Coss while Ws is rising from 0 to 80% Vross .
