IRFR420B ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 2.3A, 500V, R = 2.6Ω @V = 10 VDS(on) ..
IRFR420BTM ,500V N-Channel B-FET / Substitute of IRFR420 & IRFR420AFeaturesThese N-Channel enhancement mode power field effect • 2.3A, 500V, R = 2.6Ω @V = 10 VDS(on) ..
IRFR420PBF ,500V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD-9.599A
IRFR420
IRFU420
Internatiqnal
TOR Rectifier
HEXFET® Power MOSFET
q Dynamic ..
IRFR420TR ,500V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount
IRFR420TRL ,500V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD-9.599A
IRFR420
IRFU420
Internatiqnal
TOR Rectifier
HEXFET® Power MOSFET
q Dynamic ..
IRFR430A ,500V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications ®HEXFET Power MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power SupplyV R ..
ISL8484IUZ-T , Ultra Low ON-Resistance, 1.65V to 4.5V, Single Supply, Dual SPDT Analog Switch
ISL8484IUZ-T , Ultra Low ON-Resistance, 1.65V to 4.5V, Single Supply, Dual SPDT Analog Switch
ISL8485CB ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications. The ISL8488 and • Factory AutomationISL8490 are offered in space saving 8 lead packag ..
ISL8485CP ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversFeaturesLimited, RS-485/RS-422 Transceivers• Specified for 10% Tolerance SuppliesThe Intersil RS-48 ..
ISL8485ECB ,ESD Protected to 15kV/ 5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversApplicationsDriver (Tx) outputs are short circuit protected, even for voltages exceeding the power ..
ISL8485ECB-T ,ESD Protected to 15kV/ 5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversISL8483E, ISL8485E®Data Sheet December 2003 FN6048.3ESD Protected to ±15kV, 5V, Low Power,
IRFR420B
500V N-Channel MOSFET
IRFR420B / IRFU420B November 2001 IRFR420B / IRFU420B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.3A, 500V, R = 2.6Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 14 nC) planar, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. D !!!!!!!! D ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● !!!!!!!! G ● ● ● ● ● ● ● ● I-PAK D-PAK GS IRFR Series IRFU Series GS D !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRFR420B / IRFU420B Units V Drain-Source Voltage 500 V DSS I - Continuous (T = 25°C) Drain Current 2.3 A D C - Continuous (T = 100°C) 1.5 A C I (Note 1) Drain Current - Pulsed 8.0 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 200 mJ AS I Avalanche Current (Note 1) 2.3 A AR E (Note 1) Repetitive Avalanche Energy 4.1 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 41 W C - Derate above 25°C 0.33 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 3.05 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. B, November 2001
