IRFR3910TRLPBF ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Wuan-eDem.
Absolute Maximum Ratings
Param eter Max. Units
ID tp To = 25''C Cont ..
IRFR3911 ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters100V 0.115Ω 14ABenefits Low Gate ..
IRFR410 ,1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETsFeaturesMOSFETs• 1.5A, 500VThese are N-Channel enhancement mode silicon gate = 7.000Ω•rDS(ON)power ..
IRFR4104 ,40V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. IRFR4104 IRFU4104Absolute Maximum RatingsParameter Max. UnitsContinuous Drain Current ..
IRFR4105 ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.The D-PAK is designed for surface mounting usingvapor phase, infrared, or wave solder ..
IRFR4105 ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
ISL84684IRZ-T ,Ultra Low ON-Resistance, Low Voltage, Single Supply, Dual SPDT Analog SwitchISL84684®Data Sheet June 2004 FN6088Ultra Low ON-Resistance, Low Voltage,
ISL84684IU ,Ultra Low ON-Resistance, Low Voltage, Single Supply, Dual SPDT Analog SwitchISL84684®Data Sheet June 2004 FN6088Ultra Low ON-Resistance, Low Voltage,
ISL84684IU ,Ultra Low ON-Resistance, Low Voltage, Single Supply, Dual SPDT Analog SwitchElectrical Specifications - 3V Supply Test Conditions: V+ = +2.7V to +3.3V, GND = 0V, V = 1.4V, V = ..
ISL84684IUZ ,Ultra Low ON-Resistance, Low Voltage, Single Supply, Dual SPDT Analog SwitchApplicationsTABLE 1.
ISL84684IUZ-T ,Ultra Low ON-Resistance, Low Voltage, Single Supply, Dual SPDT Analog SwitchFEATURES AT A GLANCE• Battery powered, Handheld, and Portable EquipmentISL84684- Cellular/mobile Ph ..
ISL84684IUZ-T ,Ultra Low ON-Resistance, Low Voltage, Single Supply, Dual SPDT Analog Switchapplications include battery powered equipment that benefit from low R (0.25Ω) and fast - V+ = +1.8 ..
IRFR3910TRLPBF
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95079A
llRFR39'10PbF
International
Tart, Rectifier
. Ultra Low On-Resistance
. Surface Mount(lRFR3910) IRFU391 OPbF
a Straight Lead (IRF03910) HEXFET® Power MOSFET
. Advanced Process Technology
. Fast Switching D
. Fully Avalanche Rated VDSS = 100V
Lead-Free RDS(on) = 0.1 159
Description G
Fifth Generation HEXFETsfrom International Rectifier ID = 16A
utilize advanced processing techniques to achievethe S
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques,
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
D-PAK I-PAK
TO-252AA TO-251AA
Absolute Maximum Ratings
Param eter Max. Units
ID C) Tc = 25''C Continuous Drain Current, Veg tp 10V 16
ID Cl TC =100°C Continuous Drain Current, Vss Cl 10V 12 A
IDM Pulsed Drain Current Cot) 60
PD C)Tc = 25''C Power Dissipation 79 W
Linear Derating Factor 0.53 WPC
V63 Gate-to-Source Voltage 1 20 V
EAS Single Pulse Avalanche Energy®© 150 mJ
IAR Avalanche CurreniC06) 9.0 A
EAR Repetitive Avalanche EnergyC06) 7.9 mJ
dv/dt Peak Diode Recovery dv/dt Q 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTS Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Redc Junction-to-Case - 1.9
ReJA Junction-to-Ambient (PCB mount) " - 50 ''C/W
ReJA Junction-to-Ambient - 110
1
1/7/05
IRFR/U3910PbF International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Vesvss Drain-to-Source Breakdown Voltage 100 - - V Vas = OV, ID = 250uA
AVGRDSSIATJ Breakdown Voltage Temp. Coefficient - 0.12 - 1/f'C Reference to 25''C, lo = 1mA
RDS(0n) Static Drain-toSource On-Resistance - - 0.115 Vss = 10V, b = 10A G)
Vegm Gate Threshold Voltage 2.0 - 4.0 V Ws = I/cs, ID = 250pA
gm Forward Transconductance 6.4 - - S Ws = 50V, lo = 9.0A©
bss Drain-to-Source Leakage Current L- c. 22550 pA VS: =" gSSYV::S=_OS/YTJ = 150°C
less Gate-to-Source Forward Leakage - - 100 nA V03 = 20V
Gate-to-Source Reverse Leakage - - -100 Veg = -20V
Qg Total Gate Charge - - 44 ID = 9.0A
Qgs Gate-to-Source Charge - - 6.2 n0 Ws = 80V
di Gate-to-Drain ("Miller") Charge - - 21 Vas = 10V, See Fig. 6 and 13 Cots)
tam) Turn-On Delay Time - 6.4 - VDD = 50V
tr Rise Time - 27 - ns ID = 9.0A
tow) Turn-Off Delay Time - 37 - Rs = 12n
tr Fall Time 25 Ro = 5.59, See Fig. 10 (9t9
LD Internal Drain Inductance - 4.5 - nH ngzljzlsfizi‘ £%
Ls Internal Source Inductance - 7.5 - from package . C) a
and center of die contacts s
CISS Input Capacitance - 640 - V63 = 0V
Coss Output Capacitance - 160 - pF Ws = 25V
Crgg Reverse Transfer Capacitance - 88 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 16 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) Cot) - - 60 p-n junction diode. 5
I/so Diode Forward Voltage - - 1.3 V TJ = 2YC, ls = 9.0A, Vos = 0V Cs)
trr Reverse Recovery Time - 130 190 ns To = 25°C. ls = 9.0A
Q,, Reverse RecoveryCharge - 650 970 nC di/dt = 100A/us C0©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating: pulse width limited by © Pulse width s: 300us: duty cycle C 2%
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting Tu = 25''C, L = 3.1mH © This is applied for I-PAK, Ls of D-PAK is measured between lead and
Rs = 259, IAS = 9.0A. (See Figure 12) center of die contact
© Iso s 9.0A, di/dt s 520A/ps, VDDS V(BR)DSS» © Uses IRF530N data and test conditions
Tu s175°C
" When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniqu es refer to application note #AN-994
2
