IRFR3711ZTR ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak package IRFR3711ZIRFU3711Z
IRFR3711ZTRL , High Frequency Synchronous Buck Converters for Computer Processor Power
IRFR3806 ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packageIRFR3806PbFIRFU3806PbF
IRFR3806TRPBF ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHigh Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETUninterruptibl ..
IRFR3910 ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD - 91364BIRFR/U3910®HEXFET Power MOSFETl Ultra Low On-ResistanceDl Surface Mount (IRFR3910)V = 10 ..
IRFR3910PBF ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.The D-PAK is designed for surface mounting using D-PAK I-PAKvapor phase, infrared ..
ISL84543IH-T ,Low-Voltage/ Single Supply/ Dual SPST/ SPDT Analog Switchesapplications include battery powered • Pin Compatible with MAX323 - MAX325equipment that benefit fr ..
ISL84543IP ,Low-Voltage/ Single Supply/ Dual SPST/ SPDT Analog SwitchesFeaturesSPDT Analog Switches• Drop-in Replacements for MAX4541 - MAX4544, The Intersil ISL84541–ISL ..
ISL84544CB ,Low-Voltage/ Single Supply/ Dual SPST/ SPDT Analog SwitchesApplicationsand ISL43210 datasheet.• Battery Powered, Handheld, and Portable EquipmentTABLE 1.
ISL84544IB ,Low-Voltage/ Single Supply/ Dual SPST/ SPDT Analog SwitchesFeaturesSPDT Analog Switches• Drop-in Replacements for MAX4541 - MAX4544, The Intersil ISL84541–ISL ..
ISL84544IH-T ,Low-Voltage/ Single Supply/ Dual SPST/ SPDT Analog SwitchesApplicationsand ISL43210 datasheet.• Battery Powered, Handheld, and Portable EquipmentTABLE 1.
ISL84544IHZ-T , Low-Voltage, Single Supply, Dual SPST, SPDT Analog Switches
IRFR3711Z-IRFR3711ZPBF-IRFR3711ZTR-IRFU3711Z-IRFU3711ZPBF
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
Applications
q High Frequency Synchronous Buck
PD - 94651 B
IRFR3711Z
lRFU3711Z
HEXFET*) Power MOSFET
Converters for Computer Processor Power Voss RDS(on) max Qg
o High Frequency Isolated DC-DC 20V 5 7mf2 18 C
Converters with Synchronous Rectification . n
for Telecom and Industrial Use
Benefits
0 Very Low RDS(on) at 4.5V VGS iii)
o Ultra-Low Gate Impedance ,
q Fully Characterized Avalanche Voltage
and Current
D-Pak I-Pak
IRFR3711Z IRFU3711Z
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage i 20
ID @ TC = 25''C Continuous Drain Current, Vss @ 10V 93©
ID @ Tc = 100°C Continuous Drain Current, VGs @ 10V 66© A
IOM Pulsed Drain Current CD 370
pD @Tc = 25°C Maximum Power Dissipation s 79 W
Pro @Tc = 100''C Maximum Power Dissipation © 39
Linear Derating Factor 0.53 W/°C
To Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Notes OD
Parameter
Junction-to-Case
Junction-to-Ambient
through s are on page 11
3/2/04
IRFR/U3711Z International
. . . . TOR ilectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V Vss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 13 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 4.5 5.7 mn I/cs = 10V, ID = 15A ©
- 6.2 7.8 VGS = 4.5V, ID = 12A ©
Vesum Gate Threshold Voltage 1.55 2.0 2.45 V Vos = VGS, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coemcient - -5.4 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 16V, I/ss = 0V
- - 150 Vos =16V,VGS = 0V, TJ = 125°C
' Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 48 - - S Vos = 10V, ID = 12A
Qg Total Gate Charge - 18 27
Qgs1 Pre-Vth Gate-to-Source Charge - 5.1 - Vos = 10V
Qgs2 Post-Vth Gate-to-Source Charge - 1.8 - nC VGS = 4.5V
di Gate-to-Drain Charge - 6.5 - ID = 12A
ngdr Gate Charge Overdrive - 4.6 - See Fig. 16
st Switch Charge (Q982 + di) - 8.3 -
Qoss Output Charge - 9.8 - nC Vos = 10V, vGs = 0v
tu(on) Turn-On Delay Time - 12 - VDD = 15V, Vss = 4.51/©
t, Rise Time - 13 - ID = 12A
lam) Turn-Off Delay Time - 15 - ns Clamped Inductive Load
t, Fall Time - 5.2 -
Ciss Input Capacitance - 2160 - VGS = 0V
Coss Output Capacitance - 700 - pF Vos = 10V
Crss Reverse Transfer Capacitance - 360 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
EAS ng e se a 140
IAR 12
EAR V 7.9
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 933) MOSFET symbol C)
(Body Diode) A showing the L,-,--,
ISM Pulsed Source Current - - 370 integral reverse G (rd,
(Body Diode) T p-n junction diode. a
Vsn Diode Forward Voltage - - 1.0 V TJ = 25°C, IS = 12A, VGS = 0V CO
tr, Reverse Recovery Time - 19 28 ns T: = 25°C, IF = 12A, VDD = 10V
er Reverse Recovery Charge - 9.4 14 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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