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IRFR3711ZTR ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak package IRFR3711ZIRFU3711Z
IRFR3711ZTRL , High Frequency Synchronous Buck Converters for Computer Processor Power
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IRFR3711-IRFR3711TR-IRFR3711TRL-IRFU3711-IRFU3711PBF
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD- 94061 B
International
TOR Rectifier SMPS MOSFET IRFR3711
IRFU3711
Applications HEXFET© Power MOSFET
0 High Frequency Isolated DC-DC
Converters with Synchronous Rectification VDSS RDS(on) max ID
for Telecom and Industrial Use 20V 6.5mQ 110A©
0 High Frequency Buck Converters for
Server Processor Power Synchronous FET
o Optimized for Synchronous Buck
Converters Including Capacitive Induced 'ci 4,
Turn-on Immunity F.' l, ,
. 100% Rs Tested I,
Benefits
q Ultra-Low Gate Impedance D-Pak l-Pak
. Very Low RDS(on) at 4.5V VGS IRFR3711 IRFU3711
0 Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol Parameter Max Units
Vos Drain-Source Voltage 20 V
VGS Gate-Source Voltage * 20
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 100 ©
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 69 © A
IDM Pulsed Drain Current OD 440
PD @TA = 25°C Maximum Power Dissipation © 2.5 w
PD @TC = 25°C Maximum Power Dissipation 120
Linear Derating Factor 0.96 Wl°C
T J, TSTG Junction and Storage Temperature Range -55 to +150 ''C
Thermal Resistance
Symbol Parameter Typ Max Units
ROJC Junction-to-Case © - 1.04
ROJA Junction-to-Ambient (PCB Mount) ©© - 50 ''CAN
ROJA J unction-to-Ambient © - 110
Notes OD through © are on page 10
1
1/27/04
IRFR/U37rl
International
Static @ T J = 25°C (unless otherwise specified) TOR Rectifier
Symbol Parameter Min Typ Max Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V Vss = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.022 - V/°C Reference to 25°C, b = 1mA
. . . - 5.2 6.5 VCs =10V, ID = 15A ©
Rosom Static Drain-to-Source On-Resista nce m9
- 6.7 8.5 VGS = 4.5V, ID = 12A ©
VGS(m) Gate Threshold Voltage 1.0 - 3.0 V I/css = I/ss, ID = 250PA
- - 140 Vos = 20V, I/ss = 0V
loss Drain-to-Source Leakage Current - - 20 pA Vos = 16V, I/ss = 0V
- - 100 Vos =16V,Vss = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -200 Ves = -20V
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min Typ Max Units Conditions
ge Forward Transconductance 53 - - S Vos = 16V, lo = 30A
Qg Total Gate Charge - 29 44 ID = 15A
Qgs Gate-to-Source Charge - 7.3 - Vos = 10V
qu Gate-to-Drain ("Miller") Charge - 8.9 - nC VGs = 4.5V ©
Qoss Output Gate Charge - 33 - I/cs = 0V, Vos = 10V
Rs Gate Resistance 0.3 - 2.5 Q
tam) Tum-On Delay Time - 12 - VDD = 10V
t, Rise Time - 220 - ID = 30A
tdwm Tum-Off Delay Time - 17 -- ns Rs = 1.89
tr Fall Time - 12 - I/ss = 4.5V ©
Ciss Input Capacitance - 2980 - I/ss = 0V
Cass Output Capacitance - 1770 - pF I/os = 10V
Crss Reverse Transfer Capacitance - 280 - f = 1.0MH2
Avalanche Characteristics
Symbol Parameter Typ Max Units
EAS Single Pulse Avalanche Energy© - 460 mJ
|AR Avalanche Current C) - 30 A
Diode Characteristics
Symbol Parameter Min Typ Max Units Conditions
Is Continuous Source Current - - 110 © MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current _ - 440 integral reverse G _
(Body Diode) C) p-n junction diode. 'l
. - 0.88 1.3 To = 25°C, Is = 30A, VGs = 0V ©
VSD Diode Forward Voltage V
- 0.82 - TJ =125°C, Is = 30A, VGS = OV ©
trr Reverse Recovery Time - 50 75 ns TJ = 25°C, IF = 16A, VR = 10V
Qrr Reverse Recovery Charge - 61 92 nC di/dt = 100/Ups ©
trr Reverse Recovery Time - 48 72 ns To = 125''C, IF = 16A, VR = 10V
Q,, Reverse Recovery Charge - 65 98 nC di/dt = 100A/ps ©
