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IRFR3710Z-IRFU3710Z
100V Single N-Channel Automotive HEXFET Power MOSFET in a D-Pak package
PD - 94740A
International IRFR371OZ
" . . AUTOMOTIVE MOSFET
TOR Rectifier lRFU3710Z
HEXFET® Power MOSFET
Features D
q Advanced Proces's Technology VDSS = 100V
. Ultra Low On-Resistance
q 175°C OperatingTemperature
q Fast Switching G ' " RDS(on) = 18mQ
q Repetitive Avalanche Allowed up to Tjmax
S ID = 42A
Description
Specifically designed for Automotive applications, this HEXFET6
Power MOSFET utilizes the latest processing techniques to 14iit 'tik
achieve extremely low on-resistance per silicon area. Additional Ri' l 'Rrt)
features of this design are a 175°C junction operating tempera- l '
ture, fast switching speed and improved repetitive avalanche
rating .These features combine to make this design an extremely
efficientand reliable device foruse in Automotive applications and D-Pak I-Pak
a wide variety of other applications. IRFR371OZ IRFU371OZ
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas © 10V (Silicon Limited) 56
ID @ To = 100°C Continuous Drain Current, Vss @ 10V 39 A
ID @ To = 25°C Continuous Drain Current, Vas @ 10V (Package Limited) 42
|DM Pulsed Drain Current LO 220
PD ©Tc = 25°C Power Dissipation 140 w
Linear Derating Factor 0.95 W/°C
VGs Gate-to-Source Voltage t 20 V
EAS(Thermallylimited) Single Pulse Avalanche Energy© 150 m J
EAs (Tested ) Single Pulse Avalanche Energy Tested Value © 200
IAR Avalanche Current LO See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy © m J
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range I
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1N'm)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 1.05
ROJA Junction-to-Ambient (PCB mount) © _ 4O "C/W
ROJA Junction-to-Ambient - 110
HEXFET® is a registered trademark of International Rectifier.
1
11/13/06
IRFR/U3710Z
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Vas = 0V, ID = 250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.088 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 15 18 mn Vos = 10V, ID = 33A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 v Vos = Vas, ID = 250pA
gfs Forward Transconductance 39 - - S Vos = 25V, ID = 33A
loss Drain-to-Source Leakage Current - - 20 PA Vos = 100V, Vas = 0V
-- -- 250 VDs = 100V, Vss = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vos = 20V
Gate-to-Source Reverse Leakage - - -200 Ves = -20V
th Total Gate Charge - 69 100 ID = 33A
As Gate-to-Source Charge - 15 - nC Vos = 80V
di Gate-to-Drain ("Miller") Charge -- 25 -- Vss = 10V OD
td(on) Turn-On Delay Time - 14 - VDD = 50V
t, Rise Time - 43 - ID = 33A
tam) Turn-Off Delay Time - 53 - ns Rs = 6.8 Q
t, Fall Time - 42 - Vss = 10V ©
Lo Internal Drain Inductance -- 4.5 -- Between lead,
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Ciss Input Capacitance - 2930 - Vss = ov
Coss Output Capacitance -- 290 -- l/rss = 25V
Crss Reverse Transfer Capacitance - 180 - pF f = 1.0MHz
Coss Output Capacitance - 1200 - Vas = OV, Vros = 1.0V, f = 1.0MHz
Coss Output Capacitance - 180 - Vas = 0V, Vros = 80V, f = 1.0MH2
Coss eff. Effective Output Capacitance - 430 - Vss = 0V, Vrrs = 0V to 80V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 56 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current -- -- 220 integral reverse G
(Body Diode) (D p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 33A, Vas = 0V ©
trr Reverse Recovery Time - 35 53 ns To = 25°C, IF = 33A, VDD = 50V
Qrr Reverse Recovery Charge - 41 62 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
