IRFR3709ZTRR ,Leaded 30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency Synchronous BuckV R maxQg Converters for Comput ..
IRFR3710Z ,100V Single N-Channel Automotive HEXFET Power MOSFET in a D-Pak packageapplications. IRFR3710Z IRFU3710ZAbsolute Maximum RatingsParameter Max. UnitsContinuous Drain Curre ..
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IRFR3710ZTRLPBF ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.IRFU3710Z-701PbFRefer to page 11 for package outlineAbsolute Maximum RatingsMax.Parame ..
IRFR3711 ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency Isolated DC-DCV R max I Converters with Synchron ..
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ISL84522IB ,Low-Voltage/ Single and Dual Supply/ Quad SPST/ Analog SwitchesFEATURES AT A GLANCE- PagersISL84521 ISL84522 ISL84523- Laptops, Notebooks, PalmtopsNumber of Switc ..
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ISL84541CB ,Low-Voltage/ Single Supply/ Dual SPST/ SPDT Analog SwitchesISL84541, ISL84542, ISL84543, ISL84544®Data Sheet April 2003 FN6016.5Low-Voltage, Single Supply, Du ..
IRFR3709ZTRR
Leaded 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
Applications
PD-94712
IRFR3709Z
IRFU3709Z
HEXFET*) Power MOSFET
q High Frequency Synchronous Buck
Converters for Computer Processor Power VDSS RDS(on) max 09
o High Frequency Isolated DC-DC . . 30V 6.5m!) 17nC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits
0 Very Low RDS(0n) at 4.5V VGS 'r] )/’$‘ F",
o Ultra-Low Gate Impedance . l r
q Fully Characterized Avalanche Voltage .
and Current D-Pak l-Pak
IRFR3709Z IRFU3709Z
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage 1 20
lo @ TC = 25°C Continuous Drain Current, Vss @ 10V 86(4) A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 61©
IBM Pulsed Drain Current C) 340
PD @Tc = 25°C Maximum Power Dissipation 79 W
Pro @Tc = 100°C Maximum Power Dissipation 39
Linear Derating Factor 0.53 W/t
TJ Operating Junction and -55 to + 175 "C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
Rm Junction-to-Case - 1.9 °C/W
Ram Junction-to-Ambient (PCB Mount) s - 50
RNA Junction-to-Ambient - 1 10
Notes OD through s are on page 11
1
06/23/03
IRFR/U3709Z International
. . . . TOR ilectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250pA
ABN/oss/AT: Breakdown Voltage Temp. Coefficient - 22 - mV/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - 5.2 6.5 m9 VGS = 10V, ID = 15A ©
- 6.5 8.2 VGS = 4.5V, ID = 12A ©
VGS(th) Gate Threshold Voltage 1.35 1.80 2.25 V 1/ros = VGS, ID = 250pA
AVGS(1h)/ATJ Gate Threshold Voltage Coemcient - -5.6 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, Vss = 0V
- - 150 Vros = 24V, VGS = 0V, TJ = 150''C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
gfs Forward Transconductance 51 - - S Vos = 15V, ID = 12A
Qg Total Gate Charge - 17 26
0951 Pre-Vth Gate-to-Source Charge - 4.7 - I/os = 15V
0952 Post-Vth Gate-to-Source Charge - 1.6 - nC VGS = 4.5V
di Gate-to-Drain Charge - 5.7 - ID = 12A
ngdr Gate Charge Overdrive - 5.0 - See Fig. 16
st Switch Charge (Qgsz + di) - 7.3 -
Qoss Output Charge - IO - nC vDS = 16V, Vas = 0v
td(on) Turn-On Delay Time - 12 - VDD = 16V, Vss = 4.5V ©
t, Rise Time - 12 - ID = 12A
td(ott) Turn-Off Delay Time - 15 - ns Clamped Inductive Load
t, Fall Time - 3.9 -
Ciss Input Capacitance - 2330 - VGS = 0V
Coss Output Capacitance - 460 - pF I/os = 15V
Crss Reverse Transfer Capacitance - 230 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
EAS ng a 100
EAR 7.9
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 863) MOSFET symbol a
(Body Diode) A showing the
ISM Pulsed Source Current - - 340 integral reverse G
(Body Diode) T p-n junction diode. S
VSD Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 12A, VGS = 0V CO
tn Reverse Recovery Time - 29 44 ns To = 25°C, IF = 12A, VDD = 15V
er Reverse Recovery Charge - 25 37 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
