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IRFR3709Z from IR,International Rectifier

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IRFR3709Z

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRFR3709Z IR 18400 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package The IRFR3709Z is a Power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
- **International Rectifier (IR)**  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 62A (at 25°C)  
- **Pulsed Drain Current (IDM):** 250A  
- **RDS(on) (Max):** 6.5 mΩ (at VGS = 10V)  
- **RDS(on) (Max):** 8.5 mΩ (at VGS = 4.5V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 120W (at 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-252 (DPAK)  

### **Descriptions & Features:**  
- Designed for high-efficiency power switching applications.  
- Low on-resistance (RDS(on)) for reduced conduction losses.  
- Fast switching performance.  
- Avalanche energy specified for ruggedness in inductive load applications.  
- Optimized for synchronous rectification in DC-DC converters.  
- Lead-free and RoHS compliant.  

This information is based on the manufacturer's datasheet and technical documentation.

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