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IRFR3708-IRFR3708TRR
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
. PD - 9393 B
International 5
. . IRFR3708
TOR Rectifier SMPS MOSFET IRFU3708
Applications HEXFET0 Power MOSFET
. High Frequency DC-DC Isolated Converters
V R max I
with Synchronous Rectifcation for Telecom DSS DS(on) D@
and Industrial Use 30V 12.5mQ 61A
. High Frequency Buck Converters for
Computer Processor Power
Benefits y17t
o Ultra-Low Gate Impedance . V
. Very Low RDS(0n) at 4.5V VGS
. Fully Characterized Avalanche Voltage D P k I P k
- a - a
n rr n
a d Cu e t IRFR3708 IRFU3708
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vos Drain-Source Voltage 30 V
Ves Gate-to-Source Voltage * 12 V
ID @ TA = 25''C Continuous Drain Current, VGs @ 10V 61 Cr)
ID @ TA = 70°C Continuous Drain Current, Ves @ 10V 51 co A
IDM Pulsed Drain Current0) 244
Pro @TA = 25°C Maximum Power Dissipation@ 87 W
Pro @TA = 70°C Maximum Power Dissipation® 61 W
Linear Derating Factor 0.58 W/°C
T J , TSTG Junction and Storage Temperature Range -55 to + 175 ''C
Thermal Resistance
Parameter Typ. Max. Units
ReJc Junction-to-Case - 1 .73
ReJA Junction-to-Ambient (PCB mount)* - 50 'C/VV
ReJA Junction-to-Ambient - 110
* When mounted on 1" square PCB (FR-4 or G-1O Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes C) through © are on page 9
1
8/22/00
IRFR/U3708
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 30 - - V VGs = 0V, ID = 250PA
AV(BR)ross/ATo Breakdown Voltage Temp. Coemcient - 0.028 - Vl°C Reference to 25°C, ID = 1mA
- 8.5 12.5 VGS =10V,ID = 15A C3)
RDS(on) Static Drain-to-Source On-Resistance - 10.0 14.0 mn VGS = 4.5V, ID = 12A ©
- 15.0 30.0 Vss = 2.8V, ID = 7.5A ©
VGS(th) Gate Threshold Voltage 0.6 - 2.0 V Vros = I/ss, ID = 250pA
. - - 20 Ws = 24V, VGS = 0V
loss Drain-to-Source Leakage Current - - 100 HA Vros = 24V, VGS = 0V, TJ = 125°C
I Gate-to-Source Forward Leakage - - 200 n A VGS = 12V
GSS Gate-to-Source Reverse Leakage - - -200 VGS = -12V
Dynamic @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
Ts Forward Transconductance 49 - - S Vos = 15V, ID = 50A
% Total Gate Charge - 24 - ID = 24.8A
Qgs Gate-to-Source Charge - 6.7 - nC Vos = 15V
qu Gate-to-Drain ("Miller") Charge - 5.8 - VGS = 4.5V ©
Qoss Output Gate Charge - 14 21 N/ss = 0V, ID = 24.8A, Vos = 15V
tdwn) Turn-On Delay Time - 7.2 - VDD = 15V
tr Rise Time - 50 - ns ID = 24.8A
td(off) Turn-Off Delay Time - 17.6 - R3 = 0.69
" Fall Time - 3.7 - VGS = 4.5V ©
Ciss Input Capacitance - 2417 - VGS = 0V
Coss Output Capacitance - 707 - Vos = 15V
Crss Reverse Transfer Capacitance - 52 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 213 mJ
IAR Avalanche Currentc0 - 62 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 61G) A showing the
ISM Pulsed Source Current _ - 244 integral reverse G
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - 0.88 1.3 V Tu = 25°C, Is = 31A, Vss = 0V ©
- 0.80 - To = 125°C, Is = 31A, VGs = 0V Cs)
trr Reverse Recovery Time - 41 62 ns To = 25°C, IF = 31A, VR=20V
Qrr Reverse Recovery Charge - 64 96 nC di/dt = 100A/ps ©
tn Reverse Recovery Time - 43 65 ns To = 125°C, IF = 31A, VR=20V
Qrr Reverse Recovery Charge - 70 105 nC di/dt = 100/Vps ©
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