IRFR3707Z ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageIRFR3707ZIRFU3707Z
IRFR3707Z. ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency Synchronous BuckV R maxQgDSS DS(on) Converters ..
IRFR3707ZC ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications High Frequency Synchronous Buck HEXFET Power MOSFET Converters for Computer Proc ..
IRFR3707ZCTRPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications High Frequency Synchronous Buck HEXFET Power MOSFET Converters for Computer Proc ..
IRFR3707ZPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak package IRFR3707ZPbFIRFU3707ZPbF
IRFR3707ZTRPBF , HEXFETPower MOSFET
ISL84053IA ,Low-Voltage/ Single and Dual Supply/ 8 to 1 Multiplexer/ Dual 4 to 1 Multiplexer and a Triple SPDT Analog SwitchesApplicationsTable 1 summarizes the performance of this family.• Portable EquipmentTABLE 1.
ISL84053IAZ-T , Low Voltage, Single and Dual Supply, 8-to-1 Multiplexer, Dual 4-to-1 Multiplexer and a Triple SPDT Analog Switch
ISL84053IB ,Low-Voltage/ Single and Dual Supply/ 8 to 1 Multiplexer/ Dual 4 to 1 Multiplexer and a Triple SPDT Analog SwitchesApplicationsTable 1 summarizes the performance of this family.• Portable EquipmentTABLE 1.
ISL84514IB ,Low-Voltage/ Single Supply/ SPST/ Analog Switchesapplications include battery powered equipment that benefit from the devices’ low power • Single Su ..
ISL84515IB ,Low-Voltage/ Single Supply/ SPST/ Analog SwitchesFEATURES AT A GLANCE• Battery Powered, Handheld, and Portable Equipment• Communications SystemsISL8 ..
ISL84515IBZ-T , Low-Voltage, Single Supply, SPST, Analog Switches
IRFR3707Z-IRFR3707Z.-IRFU3707Z
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International PD-94648
TOR Rectifier IRFR37O7Z
IRFU3707Z
Applications HEXFET*) Power MOSFET
q High Frequency Synchronous Buck
Converters for Computer Processor Power Voss RDS(on) max Q9
q High Frequency Isolated DC-DC 30V 9dimf2 9.6nC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits 4i,t
0 Very Low RDS(0n) at 4.5V VGS 'r] )/’$‘ F",
o Ultra-Low Gate Impedance . l, r
q Fully Characterized Avalanche Voltage
and Current D-Pak l-Pak
IRFR3707Z IRFU3707Z
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage i 20
ID © To = 25°C Continuous Drain Current, VGS @ 10V 56© A
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 39©
IDM Pulsed Drain Current (D 220
PD @Tc = 25°C Maximum Power Dissipation 50 W
PD @Tc = 100°C Maximum Power Dissipation 25
Linear Derating Factor 0.33 W/°C
TJ Operating Junction and -55 to + 175 °c
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
Raw: Junction-to-Case - 3.0 "CA/V
ROJA Junction-to-Ambient (PCB Mount) s - 50
ROJA Junction-to-Ambient - 110
Notes OD through s are on page 11
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04/03/03
IRFR/U3707Z International
. . . . TOR ilectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.023 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 7.5 9.5 mn I/ss = 10V, ID = 15A ©
- 10 12.5 Vss=4.5V, 1o=12A0)
VGS(th) Gate Threshold Voltage 1.35 1.80 2.25 V Vos = VGS, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coemcient - -5.0 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, Vss = 0V
- - 150 Vos = 24V, VGS = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 71 - - S Vos = 15V, ID = 12A
09 Total Gate Charge - 9.6 14
Qgs1 Pre-Vth Gate-to-Source Charge - 2.6 - Vos = 15V
0952 Post-Vth Gate-to-Source Charge - 0.90 - nC VGS = 4.5V
di Gate-to-Drain Charge - 3.5 - ID = 12A
ngdr Gate Charge Overdrive - 2.6 - See Fig. 16
st Switch Charge (Q982 + di) - 4.4 -
Qoss Output Charge - 5.8 - nC Vos = 15V, VGS = 0V
td(on) Turn-On Delay Time - 8.0 - Vor, = 16V, I/ss = 4.5V ©
t, Rise Time - 11 - ID = 12A
tum) Turn-Off Delay Time - 12 - ns Clamped Inductive Load
t, Fall Time - 3.3 -
Ciss Input Capacitance - 1150 - VGS = 0V
Cass Output Capacitance - 260 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 120 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
EAS ng 42
IAR V a 12
EAR v 5.0
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 56© MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 220 integral reverse G
(Body Diode) co p-njunction diode. S
Vsn Diode Forward Voltage - - 1.0 v TJ = 25''C, Is = 12A, VGS = 0V ©
tr, Reverse Recovery Time - 25 38 ns T J = 25°C, IF = 12A, Vor, = 15V
er Reverse Recovery Charge - 17 26 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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