IRFR3707 ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedV R max IDSS DS(on) D Converters ..
IRFR3707TRL ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedV R max IDSS DS(on) D Converters ..
IRFR3707TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak package SMPS MOSFET
IRFR3707TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedV R max IDSS DS(on) D Converters ..
IRFR3707Z ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageIRFR3707ZIRFU3707Z
IRFR3707Z. ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency Synchronous BuckV R maxQgDSS DS(on) Converters ..
ISL84051IA ,Low-Voltage/ Single and Dual Supply/ 8 to 1 Multiplexer/ Dual 4 to 1 Multiplexer and a Triple SPDT Analog SwitchesFeatures1 Multiplexer, Dual 4 to 1 Multiplexer and a • Drop-in Replacements for MAX4051/A, MAX4052/ ..
ISL84051IB ,Low-Voltage/ Single and Dual Supply/ 8 to 1 Multiplexer/ Dual 4 to 1 Multiplexer and a Triple SPDT Analog SwitchesFeatures1 Multiplexer, Dual 4 to 1 Multiplexer and a • Drop-in Replacements for MAX4051/A, MAX4052/ ..
ISL84052IA ,Low-Voltage/ Single and Dual Supply/ 8 to 1 Multiplexer/ Dual 4 to 1 Multiplexer and a Triple SPDT Analog SwitchesISL84051, ISL84052, ISL84053®Data Sheet November 2003 FN6047.3Low-Voltage, Single and Dual Supply, ..
ISL84052IB ,Low-Voltage/ Single and Dual Supply/ 8 to 1 Multiplexer/ Dual 4 to 1 Multiplexer and a Triple SPDT Analog SwitchesISL84051, ISL84052, ISL84053®Data Sheet November 2003 FN6047.3Low-Voltage, Single and Dual Supply, ..
ISL84053IA ,Low-Voltage/ Single and Dual Supply/ 8 to 1 Multiplexer/ Dual 4 to 1 Multiplexer and a Triple SPDT Analog SwitchesApplicationsTable 1 summarizes the performance of this family.• Portable EquipmentTABLE 1.
ISL84053IAZ-T , Low Voltage, Single and Dual Supply, 8-to-1 Multiplexer, Dual 4-to-1 Multiplexer and a Triple SPDT Analog Switch
IRFR3707-IRFR3707TRL-IRFU3707
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier SMPS MOSFET
Applications
q High Frequency DC-DC Isolated
PD - 93934B
IRFR3707
IRFU3707
HEXFET© Power MOSFET
Converters with Synchronous Rectification Voss RDS(0n) max ID
for Telecom and Industrial use 30V 13mg 61A©
o High Frequency Buck Converters for
Computer Processor Power
Benefits
. Ultra-Low R . tCt'' '
DS(on) fpf, A Ftlb"r"
. Very Low Gate Impedance 'N,' _ 't
. Fully Characterized Avalanche Voltage .
and Current
D-Pak l-Pak
IRFR3707 IRFU3707
Absolute Maximum Ratings
Symbol Parameter Max. Units
I/rss Drain-Source Voltage 30 V
VGS Gate-to-Source Voltage i 20 V
In @ Tc = 25°C Continuous Drain Current, VGS @ 10V 61 G)
In @ To = 70''C Continuous Drain Current, VGS @ 10V 51 © A
IDM Pulsed Drain CurrentCD 244
pr, @Tc = 25°C Maximum Power Dissipation® 87 W
Pro @Tc = 70°C Maximum Power Dissipation® 61 W
Linear Derating Factor 0.59 mW/°C
T J , TSTG Junction and Storage Temperature Range -55 to + 175 ''C
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 1 .73
ReJA Junction-to-Ambient (PCB mount)* - 50 °CNV
ReJA Junction-to-Ambient - 110
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes (O through © are on page 9
1
8/22/00
IRFR/U3707
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.027 - 1//c'C Reference to 25°C, ID = 1mA
R St ti D . t S O R ist - 9.7 13 n VGs=10V,lD=15A ©
DS(on) a IC ram- o- ource n- eSIs ance - 13.2 17.5 m VGs = 4.5V, ID = 12A ©
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V Vos = VGS, ID = 250PA
. - - 20 Vos = 24V, VGS = ov
I Drain-to-Source Leaka e Current A
DSS g - - 100 u N/ns = 24V, veg = 0v, T: = 125°C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -200 VGs = -16V
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
Ts Forward Transconductance 37 -.- .-.- S Vos = 15V, ID = 49.6A
Qg Total Gate Charge - 19 - lo = 24.8A
Qgs Gate-to-Source Charge - 8.2 - nC VDs = 15V
qu Gate-to-Drain ("Miller") Charge - 6.3 - VGS = 4.5V ©
Qoss Output Gate Charge - 18 27 V63 = 0V, Vros = 15V
tdem) Turn-On Delay Time - 8.5 - VDD = 15V
tr Rise Time - 78 - ns ID = 24.8A
td(off) Turn-Off Delay Time - 11.8 - Rs = 1.89
tf Fall Time - 3.3 - N/ss = 4.5V ©
Ciss Input Capacitance - 1990 - VGs = 0V
Cass Output Capacitance - 707 - Vos = 15V
Crss Reverse Transfer Capacitance - 50 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 213 m]
IAR Avalanche Current0) - 61 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - 616*) A showing the
ISM Pulsed Source Current 244 integral reverse G
(Body Diode) (D - - p-n junction diode. s
Vso Diode Forward Voltage - 0.88 1.3 V Tu = 25°C, Is = 31A, Vss = 0V ©
- 0.8 - Tu =125°C,|s = 31A, VGs = 0V ©
trr Reverse Recovery Time - 39 59 ns TJ = 25°C, IF = 31A, VR=20V
Qrr Reverse Recovery Charge - 49 74 n0 di/dt = 100A/ps ©
trr Reverse Recovery Time - 42 63 ns Tu = 125°C, IF = 31A, VR=20V
Gr Reverse Recovery Charge - 62 93 nC di/dt = 100Alps ©
2
