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IRFR3706CTRPBF
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 96065
International
Tart, Rectifier IRFR3706CPbF
IRFU3706CPbF
SMPS MOSFET
Applications
. High Frequency Isolated DC-DC HEXFET Power MOSFET
Converters with Synchronous Rectification Voss RDS(on) max ID
l Telecom and Industrial Use 20V 9.0mQ 75A@
0 High Frequency Buck Converters for
Computer Processor Power
q Lead-Free
Benefits tiii)) s1(,it, _
o Ultra-Low Gate Impedance _ l l, N. '
q Very Low RDS(on) at 4.5V VGS
q Fully Characterized Avalanche Voltage D-Pak l-Pak
IRFR3706CPbF IRFU3706CPbF
and Current
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vos Drain-Source Voltage 20 V
Vss Gate-to-Source Voltage i 12 V
In @ Tc = 25°C Continuous Drain Current, VGs @ 10V 75 (D
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 53 GD A
IDM Pulsed Drain Current0) 280
Po @Tc = 25°C Maximum Power Dissipation© 88 W
Pro @Tc = 100°C Maximum Power Dissipation© 44 W
Linear Derating Factor 0.59 mW/oC
TJ , TSTG Junction and Storage Temperature Range -55 to + 175 ''C
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Cases - 1 .7
ReJA Junction-to-Ambient (PCB mount)'© - 50 "CA/V
ReJA Junction-to-Ambien/O - 1 10
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes co through s are on page 10
1
06/02/06
IRFR/U3706CPbF lnterryti.c.y,ryol
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Jnits Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V VGs = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.021 - W'C Reference to 25°C, ID = 1mA
- 6.9 9.0 VGS = 10V, Io = 15A ©
Roswn) Static Drain-to-Source On-Resistance - 8.1 11 m9 VGS = 4.5V, ID = 12A ©
- 11.5 23 VGS = 2.8V, ID = 7.5A ©
VGS(th) Gate Threshold Voltage 0.6 - 2.0 V Vros = Vss, ID = 250PA
. - - 20 Vros = 16V, VGS = 0V
loss Drain to-Source Leakage Current - - 100 p Vos = 16V, VGS = 0V, TJ = 1 2 5" C
I Gate-to-Source Forward Leakage - - 200 nA VGS = 12V
GSS Gate-to-Source Reverse Leakage - - -200 VGS = -12V
Dynamic @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
9ts Forward Transconductance 53 - - S Vos = 16V, ID = 57A
% Total Gate Charge - 23 35 ID = 28A
095 Gate-to-Source Charge - 8.0 12 nC Vos = 10V
di Gate-to-Drain ("Miller") Charge - 5.5 8.3 VGS = 4.5V ©
Qoss Output Gate Charge - 16 24 N/ss = 0V, Vros = 10V
Rg Gate Resistance - 1.8 - Q
kom Turn-On Delay Time - 6.8 - VDD = 10V
tr Rise Time - 87 - ns ID = 28A
td(ott) Turn-Off Delay Time - 17 - RG = 1.89
tf Fall Time - 4.8 - VGS = 4.5V ©
Ciss Input Capacitance - 2410 - Vss = 0V
Coss Output Capacitance - 1070 - pp Vros = 10V
Crss Reverse Transfer Capacitance - 140 - f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 220 m]
IAR Avalanche Current© - 28 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 75@ MOSFET symbol D
(Body Diode) - - A showing the
ISM Pulsed Source Current 280 integral reverse G
(Body Diode) OD - - p-n junction diode. s
VSD Diode Forward Voltage - 0.88 1.3 V TJ = 25°C, ls = 36A, VGS = 0V ©
- 0.82 - TJ = 125°C, Is = 36A, l/ss = 0V ©
tn Reverse Recovery Time - 45 68 ns T: = 25°C, IF = 36A, VR=20V
Qrr Reverse Recovery Charge - 65 98 nC di/dt = 100A/ps ©
trr Reverse Recovery Time - 49 74 ns TJ = 125°C, IF = 36A, VR=20V
Qrr Reverse Recovery Charge - 78 120 nC di/dt = 100A/ps ©
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