IRFR3607PBF ,75V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHigh Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETUninterruptibl ..
IRFR3704 ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageIRFR3704SMPS MOSFETIRFU3704
IRFR3704PBF ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedV R max IDSS DS(on) D Converters ..
IRFR3704TR ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageIRFR3704SMPS MOSFETIRFU3704
IRFR3704TRL ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedV R max IDSS DS(on) D Converters ..
IRFR3704TRLPBF ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedV R max IDSS DS(on) D Converters ..
ISL83485IBZ , 3.3V, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL83485IBZ , 3.3V, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL83485IP ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversApplicationsDriver (Tx) outputs are short circuit protected, even for • Factory Automationvoltages ..
ISL83488IB ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications. • Level Translators (e.g., RS-232 to RS-422)The ISL83488 and ISL83490 are offered in ..
ISL83490IB ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications not requiring Rx and Tx • RS-232 “Extension Cords”output disable functions (e.g., poin ..
ISL83490IP ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversFeaturesRate Limited, RS-485/RS-422 Transceivers• Operate from a Single +3.3V Supply (10% Tolerance ..
IRFR3607-IRFR3607PBF
75V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 97312B
International
TOR Rectifier IlRFIR3607PbF
IRFU3607PbF
Applications
. High Efficiency Synchronous Rectification in
SMPS HEXFET® Power MOSFET
Uninterruptible Power Supply
High Speed Power Switching D Voss 75V
Hard Switched and High Frequency Circuits RDS(on) typ. 7.34mO
. max. 9.0mQ
Benefits li, (Silicon Limited) 80ACO
0 Improved Gate, Avalanche and Dynamic s ID (Package Limited) 56A
dv/dt Ruggedness
. Fully Characterized Capacitance and
Avalanche SOA D sigiitt
0 Enhanced body diode dV/dt and dI/dt (ifsii)it Rf'
Capability . l I. s . 's
D-Pak l-Pak
IRFR3607PbF IRFU3607PbF
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 80C)
lr) @ TC = 100°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 5600 A
ID @ TC = 25°C Continuous Drain Current, Vss @ 10V (Wire Bond Limited) 56
bs, Pulsed Drain Current © 310
PD @Tc = 25°C Maximum Power Dissipation 140 W
Linear Derating Factor 0.96 W/°C
Vss Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery co 27 V/ns
Tu Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy co 120 mJ
IAR Avalanche Current C) 46 A
EAR Repetitive Avalanche Energy s 14 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJC Junction-to-Case © - 1.045 °C/W
ReJA Junction-to-Ambient (PCB Mount) - 50
ReJA Junction-to-Ambient - 1 10
1
04/30/2010
IRFR/U3607PbF
International
TOR Rectifier
Static @ T, = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR,DSS Drain-to-Source Breakdown Voltage 75 - - V Vas = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.096 - V/°C Reference to 25°C, ID = 5mA©
Rosom Static Drain-to-Source On-Resistance - 7.34 9.0 mg Vss = 10V, ID = 46A S
VGSW Gate Threshold Voltage 2.0 - 4.0 V Vos = I/ss, ID = 100pA
loss Drain-to-Source Leakage Current - - 2O pA VDS = 75V, Vss = 0V
- - 250 VDS = 60V, Vss = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
Dynamic © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 115 - - S Vos = 50V, ID = 46A
Q, Total Gate Charge - 56 84 n0 ID = 46A
As Gate-to-Source Charge - 13 - Vos = 38V
di Gate-to-Drain ("Miller") Charge - 16 - I/ss = 10V G)
stnc Total Gate Charge Sync. (Qg - di) - 40 - ID = 46A, Vos =0V, Vas = 10V
Ream) Internal Gate Resistance - 0.55 - Q
td(on) Turn-On Delay Time - 16 - ns VDD = 49V
t, Rise Time - 110 - ID = 46A
td(off) Turn-Off Delay Time - 43 - Rs = 6.89
t, Fall Time - 96 - I/ss = 10V (9
Ciss Input Capacitance - 3070 - PF Ves = 0V
Coss Output Capacitance - 280 - Vos = 50V
Crss Reverse Transfer Capacitance - 130 - f = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related)C8 - 380 - I/ss = 0V, N/ns = 0V to 60V
Coss eff. (TR) Effective Output Capacitance (Time Related)© - 610 - I/ss = 0V, Vos = 0V to 60V ©
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 8000 A MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current - - 310 integral reverse G
(Body Diode) © p-n junction diode.
Va, Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 46A, Vss = 0V ©
trr Reverse Recovery Time - 33 50 ns T J = 25°C Vs, = 64V,
- 39 59 TJ = 125°C IF = 46A
Qrr Reverse Recovery Charge - 32 48 " TJ = 25°C di/dt = 100A/ps s
_ 47 71 T J = 125°C
IRRM Reverse Recovery Current - 1.9 - A T J = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 56A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
© ISD f 46A, di/dt I 1920A/ps, VDD S V(BR)DSSv Tu S 175°C.
S Pulse width 3 400ps; duty cycle S 2%.
© COSS eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDs is rising from 0 to 80% Voss.
© Coss eff. (ER) is a fixed capacitance that gives the same energy as
© Repetitive rating; pulse width limited by max. junction
temperature.
© Limited by TJmax, starting TJ = 25°C, L = 0.12mH
Rs = 259, Me = 46A, l/ss =10V. Part not recommended for use
above this value.
Coss while VDS is rising from O to 80% Voss-
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
© Rs is measured at Tu approximately 90°C.
2
