IRFR3505 ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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ISL83485IB ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications.• -7V to +12V Common Mode Input Voltage RangeData rates up to 10Mbps are achievable by ..
ISL83485IBZ , 3.3V, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL83485IBZ , 3.3V, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
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IRFR3505
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Internet
TOR Rectifier
Featu res
. Advanced P
Ultra Low On-Resistance
AUTOMOTIVE MOSFET
PD - 94506A
IRFR3505
IRFU3505
HEXFET® Power MOSFET
rocess Technology
VDSS = 55V
. 175°C Operating Temperature
. Fast Switching A RDS(on) = 0.0139
c Repetitive Avalanche Allowed up to Tjmax G
s D 30
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this product are
a 175°C junction operating temperature, fast switching speed and im-
proved repetitive avalanche rating. These features combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, D-Pak l-Pak
or wave soldering techniques. The straight lead version (IRFU series) is IRFR3505 IRFU3505
for through-hole mounting applications. Power dissipation levels up to
1.5 watts are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 71
ID @ To = 100°C Continuous Drain Current, Vss @ 10V (See Fig.9) 49 A
ID © Tc = 25°C Continuous Drain Current, Vss @ 10V (Package limited) 30
IBM Pulsed Drain Current OD 280
PD @TC = 25°C Power Dissipation 140 W
Linear Derating Factor 0.92 W/°C
VGS Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy© 210 mJ
EAs (tested) Single Pulse Avalanche Energy Tested Value© 410
IAR Avalanche CurrentCD See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
dv/dt Peak Diode Recovery dv/dt © 4.0 V/ns
To Operating Junction and -55 to + 175
Tsms Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rout: Junction-to-Case - 1 .09
' Junction-to-Ambient (PCB mount)© - 4O °CNV
RQJA Junction-to-Ambient - 1 10
1
12/11/02
IRFR/U3505
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmoss Drain-to-Source Breakdown Voltage 55 - - V Vai; = 0V, ID = 250pA
AViimvss/ATo Breakdown Voltage Temp. Coefficient - 0.057 - V/°C Reference to 25°C, lo = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 0.011 0.013 n Vss = 10V, ID = 30A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vros = 10V, ID = 250pA
gfs Forward Transconductance 41 - - S Vos = 25V, ID = 30A
loss Drain-to-Source Leakage Current - - 20 pA Vros = 55V, VGS = 0V
- - 250 Vos = 55V, VGS = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 200 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -200 Vss = -20V
% Total Gate Charge - 62 93 ID = 30A
095 Gate-to-Source Charge - 17 26 nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - 22 33 l/ss = 10V@
tdwn) Turn-On Delay Time - 13 - VDD = 28V
tr Rise Time - 74 - lo = 30A
1mm Turn-Off Delay Time - 43 - ns Rs = 6.89
if Fall Time - 54 - Vss = 10V (0
u, Internal Drain Inductance - 4.5 - Between Pd., D
nH 6mm (0.25in.) Q: )
from package G
Ls Intemal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 2030 - Vss = 0V
Coss Output Capacitance - 470 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 91 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 2600 - Vss = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 330 - Vas = 0V, Vos = 44V, f = 1.0MH2
Coss eff. Effective Output Capacitance s - 630 - I/ss = 0V, Vos = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 71 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - 280 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, IS = 30A, N/ss = 0V (0
tn Reverse Recovery Time - 70 105 ns Tu = 25°C, IF = 30A, l/ron = 28V
G, Reverse RecoveryCharge - 180 270 nC di/dt = 100A/ps (4)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes (D through are on page 11
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