IRFR3504Z ,40V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. IRFR3504Z IRFU3504ZAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuou ..
IRFR3504ZTRPBF ,40V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsContinuous Drain Current, V @ 10V (Silicon ..
IRFR3505 ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR3505TRLPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR3518 ,80V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications High frequency DC-DC convertersV R max IDSS DS(on) D 80V 29m 30ABenefits Low Gate ..
IRFR3518TRPBF ,80V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications High frequency DC-DC convertersV R max IDSS DS(on) D Lead-Free 80V 29m 30ABenefit ..
ISL83483IP ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications.• -7V to +12V Common Mode Input Voltage RangeData rates up to 10Mbps are achievable by ..
ISL83485IB ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications.• -7V to +12V Common Mode Input Voltage RangeData rates up to 10Mbps are achievable by ..
ISL83485IBZ , 3.3V, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL83485IBZ , 3.3V, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL83485IP ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversApplicationsDriver (Tx) outputs are short circuit protected, even for • Factory Automationvoltages ..
ISL83488IB ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications. • Level Translators (e.g., RS-232 to RS-422)The ISL83488 and ISL83490 are offered in ..
IRFR3504Z
40V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International IRFgg‘gz:
. . AUTOMOTIVE MOSFET
TOR Rectifier IRFU3504Z
HEXFET© Power MOSFET
Features D
Advanced Process Technology VDSS = 40V
Ultra LowOn-Resistance
175°C Operating Temperature
Fast Switching ' " RDS(on) = 9,0mg
Repetitive Avalanche Allowed up to Tjmax
ID = 42A
Description
Specifically designed for Automotive applications, this HEXFETO
Power MOSFET utilizes the latest processing techniques to 1tiaii)t, :gib
achieve extremely low on-resistance per silicon area. Additional Ni'5''i! Re
features of this design are a 175°C junction operating tempera- l, ' _
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficientand reliable device for usein Automotive applications and D-Pak l-Pak
a wide variety of other applications. IRFR3504Z IRFU3504Z
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 77
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 54 A
ID @ To = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 42
IDM Pulsed Drain Current LO 310
PD ©rc = 25°C Power Dissipation 90 W
Linear Derating Factor 0.60 W/°C
VGS Gate-to-Source Voltage i 20 V
EAS(Thermawvmited) Single Pulse Avalanche Energy© 77 m J
EAS (Tested ) Single Pulse Avalanche Energy Tested Value © 110
IAR Avalanche Current LO See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy L9 m J
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1N'm)
Thermal Resistance
Parameter . Max.
ROJC Junction-to-Case 1.66
ROJA U n- mo 40
ROSA J u nction-to-Am bient 1 1O
HEXFET© is a registered trademark of International Rectifier.
1
06/05/04
IRFR/U3504Z
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.032 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 7.3 9.0 m9 VGS = 10V, b = 42A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 50pA
gfs Forward Transconductance 32 - - S Vos = 10V, ID = 42A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 40V, I/ss = 0V
- - 250 Vros = 40V, VGS = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 200 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
09 Total Gate Charge - 3O 45 ID = 42A
Qgs Gate-to-Source Charge - 9.6 - nC Vos = 32V
qu Gate-to-Drain ("Miller") Charge - 12 - VGS = 10V ©
td(on) Turn-On Delay Time - 15 - VDD = 20V
t, Rise Time - 74 - ID = 42A
td(off) Turn-Off Delay Time - 30 - ns Rs = 15 Q
I: Fall Time - 38 - Vss = 10V OD
Lo Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) /\ l
Ls Internal Source Inductance - 7.5 - from package 9&4 /
and center of die contact s
Ciss Input Capacitance - 1510 - N/ss = 0V
Coss Output Capacitance - 340 - Vos = 25V
Crss Reverse Transfer Capacitance - 190 - pF f = 1.0MHz
Coss Output Capacitance - 1100 - I/ss = 0V, Vos = 1.0V, f = 1.0MHz
Cass Output Capacitance - 340 - VGS = 0V, Vos = 32V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 460 - N/ss = 0V, Vos = 0V to 32V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 42 MOSFET symbol D
(Body Diode) A showing the H]:
ISM Pulsed Source Current - - 310 integral reverse a E
(Body Diode) CD p-n junction diode. "
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 42A, VGS = 0V ©
tn Reverse Recovery Time - 18 27 ns To = 25°C, IF = 42A, VDD = 20V
Qrr Reverse Recovery Charge - 9.2 14 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
