IRFR3504 ,40V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. IRFR3504 IRFU3504Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous ..
IRFR3504TRPBF ,40V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D-Pak I-PakIRFR3504PbF IRFU3504PbFAbsolute Maximum RatingsParameter Max. UnitsI @ T = ..
IRFR3504Z ,40V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. IRFR3504Z IRFU3504ZAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuou ..
IRFR3504ZTRPBF ,40V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsContinuous Drain Current, V @ 10V (Silicon ..
IRFR3505 ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR3505TRLPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
ISL83483IB ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversISL83483, ISL83485, ISL83488,®ISL83490, ISL83491Data Sheet December 2003 FN6052.23.3V, Low Power, H ..
ISL83483IB ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversApplicationsDriver (Tx) outputs are short circuit protected, even for • Factory Automationvoltages ..
ISL83483IP ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications.• -7V to +12V Common Mode Input Voltage RangeData rates up to 10Mbps are achievable by ..
ISL83485IB ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications.• -7V to +12V Common Mode Input Voltage RangeData rates up to 10Mbps are achievable by ..
ISL83485IBZ , 3.3V, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL83485IBZ , 3.3V, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
IRFR3504
40V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 94499A
AUTOMOTIVE MOSFET IRFR3504
IRFU3504
Features HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance D
175°C OperatingTemperature VDSS = 40V
Fast Switching
Repetitive Avalanche Allowed up to Tjmax . A RDS(on) = 9.2mQ
Description G
Specificallydesigned forAutomotive applications, this HEXFET©
Power MOSFET utilizes the latest processing techniques to ID = 30A
achieve extremely low on-resistance per silicon area. Addi-
tional features of this product are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating. These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
International
TOR Rectifier
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are D-Pak l-Pak
possible in typical surface mount applications. IRFR3504 IRFU3504
Absolute Maximum Ratings
Parameter Max. Units
ID © To = 25''C Continuous Drain Current, Vss © 10V (Silicon limited) 87
ID @ To = 100°C Continuous Drain Current, l/ss @ 10V (See Fig.9) 61 A
ID @ To = 25°C Continuous Drain Current, Vas @ 10V (Package limited) 30
lost Pulsed Drain Current (D 350
Po ©Tc = 25°C Power Dissipation 140 W
Linear Derating Factor 0.92 W/°C
Vss Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy© 240 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value© 480
IAR Avalanche Current® See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Roy: Junction-to-Case - 1.09
RQJA Junction-to-Ambient (PCB mount)© - 50 "C/W
ReJA Junction-to-Ambient - 110
HEXFET(R) is a registered trademark of International Rectifier.
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12/11/02
IRFR/U3504 International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bnpss Drain-to-Source Breakdown Voltage 40 - - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.041 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 7.8 9.2 mf2 N/ss = 10V, ID = 30A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = 10V, lo = 250pA
gts Forward Transconductance 40 - - S Vos = 10V, ID = 30A
loss Drain-to-Source Leakage Current : : 22500 PA x3: : :21: tt, : 'J, To = 125°C
ds Gate-to-Source Forward Leakage - - 200 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -2OO N/ss = -20V
% Total Gate Charge - 48 71 ID = 30A
Qgs Gate-to-Source Charge - 12 18 nC Vos = 32V
di Gate-to-Drain ("Miller") Charge - 13 20 Vss = 10V©
Won) Turn-On Delay Time - 11 - VDD = 20V
tr Rise Time - 53 - ID = 30A
td(off) Turn-Off Delay Time - 36 - ns Rs = 6.89
tf Fall Time - 22 - Ves = 10V ©
LD Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) )
Ls Internal Source Inductance --.- 7.5 - from package G
and center of die contact s
Ciss Input Capacitance - 2150 - Ves = 0V
Coss Output Capacitance - 580 - Vos = 25V
Crss Reverse Transfer Capacitance - 46 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 2830 - Vss = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 510 - Vss = 0V, VDs = 32V, f = 1.0MHz
Coss eff. Effective Output Capacitance s - 870 - Vss = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 87 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) CD - - 350 p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 30A, VGS = 0V ©
in Reverse Recovery Time - 53 80 ns To = 25°C, IF = 30A, VDD = 20V
Qrr Reverse Recovery Charge - 86 130 nC di/dt=100A/ps (0
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
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