IRFR3418 ,80V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R Max IDSS DS(on) D High frequency DC-DC converters80V 14m
IRFR3418-IRFR3418TRL
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 94452A
|RFR3418
lRFU3418
HEXFET© Power MOSFET
Applications V R Max I
. High frequency DC-DC converters DSS DS(on) D
80V 14mf2 30A
International
TOR Rectifier
Benefits
0 Low Gate-to-Drain Charge to Reduce
Switching Losses $3..
0 Fully Characterized Capacitance Including xssiii,)r, 'Ri'
Effective Coss to Simplify Design, (See
App. Note AN1001) I.
q Fully Characterized Avalanche Voltage
and Current D-Pak I-Pak
IRFR3418 IRFU3418
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 80 V
l/ss Gate-to-Source Voltage t 20
ID @ TC = 25°C Continuous Drain Current, Vas @ 10V 70©
ID @ TC = 100°C Continuous Drain Current, Vss © 10V 50 A
IDM Pulsed Drain Current CD 280
PD ©Tc = 25°C Maximum Power Dissipation 140 W
PD @TA = 25°C Maximum Power Dissipation 3.8
Linear Derating Factor 0.95 W/°C
dv/dt Peak Diode Recovery dv/dt © 5.2 V/ns
TJ Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 1.05
ROJA Junction-to-Ambient (PCB Mount) * - 40 °C/W
ROJA Junction-to-Ambient - 110
Notes co through © are on page 10
1
03/30/05
IRFR/U3418
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(smoss Drain-to-Source Breakdown Voltage 80 - - V Vas = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.08 - VPC Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 11.5 14 mn Vas = 10V, ID = 18A Cr)
Vesun) Gate Threshold Voltage 3.5 - 5.5 V Vos = Vas, b = 250pA
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 80V, Vss = 0V
- - 250 I/rss = 64V, Vss = ov, T: = 150°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage -- -- -100 Vos = -20V
Dynamic @ T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 66 - - S Vos = 25V, ID = 18A
q, Total Gate Charge - 63 94 lo = 18A
As Gate-to-Source Charge - 23 - nC Vos = 40V
09:: Gate-to-Drain ("Miller") Charge - 23 - Ves = 10V C9
td(on) Turn-On Delay Time - 24 - VDD = 40V
tr Rise Time - 72 - ID = 18A
tam) Turn-Off Delay Time - 41 - ns Rs = 6.89
tf Fall Time - 27 - Vas = 10V ©
Ciss Input Capacitance - 3510 - Vss = ov
Coss Output Capacitance - 330 - I/rs = 25V
Crss Reverse Transfer Capacitance -- 190 - pF f = 1.0MHz
Coss Output Capacitance -- 1220 -- Vss = OV, Ws = 1.0V, f = 1.0MHz
Coss Output Capacitance - 240 --.- Vos = OV, Vos = 64V, f = 1.0MHz
Coss eff Effective Output Capacitance - 360 - Vss = 0V, Vos = 0V to 64V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy©© _ 260 mJ
|AR Avalanche Current LO _ 18 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current - - 70 A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 280 integral reverse G
(Body Diode) COO) p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 18A, Vas = 0V Cr)
trr Reverse Recovery Time - 57 - ns To = 25°C, IF = 18A, VDD = 25V
Qrr Reverse Recovery Charge - 130 - nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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