IRFR3411TR ,Leaded 100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR3412 ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications Switch Mode Power Supply (SMPS) V R max IDSS DS(on) D Motor Drive100V 0.025Ω 48AB ..
IRFR3412PBF , SMPS MOSFET
IRFR3412TRPBF ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications Switch Mode Power Supply (SMPS) V R max IDSS DS(on) D Motor Drive100V 0.025Ω 48AB ..
IRFR3418 ,80V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R Max IDSS DS(on) D High frequency DC-DC converters80V 14m
IRFR3411TR
Leaded 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 94393
RFR34'11
RFU34rl
HEXFET® Power MOSFET
International
TOR Rectifier
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating D
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated - A
VDSS = 100V
RDS(on) = 44mQ
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to S
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fastswitching speed and
ruggedized devicedesignthatHEXFET powerMOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
ID = 32A
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The
straight lead, l-Pak, version (IRFU series) is forthrough-
hole mounting applications. Power dissipation levels up D-Pak l-Pak
to 1.5 watts are possible in typical surface mount IRFR3411 IRFU3411
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 32
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 23 A
IDM Pulsed Drain Current (D 110
Pro @Tc = 25°C Power Dissipation 130 W
Linear Derating Factor 0.83 W/°C
Ves Gate-to-Source Voltage i 20 V
IAR Avalanche CurrentC) 16 A
EAR Repetitive Avalanche EnergyCD 13 mJ
dv/dt Peak Diode Recovery dv/dt © 7.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
' Junction-to-Case - 1 .2
RQJA Junction-to-Ambient (PCB mount)* - 50 oCNV
ReJA Junction-to-Ambient - 110
1
02/18/02
|RFR3411/IRFU3411 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 100 - - V VGs = 0V, ID = 250pA
AV
RDS(on) Static Drain-to-Source On-Resistance - 36 44 mn VGS = 10V, ID = 16A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGs, ID = 250PA
gfs Forward Transconductance 21 - - S VDs = 50V, ID = 16A@
Koss Drain-to-Source Leakage Current - - 25 pA Vros = 100V, VGS = 0V
- - 250 Vros = 80V, Vss = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - 48 71 lo = 16A
Qgs Gate-to-Source Charge - 9.0 14 nC VDs = 80V
di Gate-to-Drain ("Miller") Charge - 14 21 VGS = 10V, See Fig. 6 and 13
tum) Turn-On Delay Time - 11 - VDD = 50V
tr Rise Time - 35 - ns ID = 16A
td(off) Turn-Off Delay Time - 39 - Rs = 5.19
tf Fall Time - 35 - VGs = 10V, See Fig. 10 ©
Lo Internal Drain Inductance - 4.5 - Between Isad, D
nH 6mm (0.25in.) E )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 1960 - VGS = 0V
Cass Output Capacitance - 250 - Vos = 25V
Crss Reverse Transfer Capacitance - 4O - pF f = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy© - 700S 185© mJ lAs = 16A, L = 1.5mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ _ 33 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)C0 - - 110 p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V TJ = 25°C, Is = 16A, VGS = 0V CO
tn Reverse Recovery Time - 115 170 ns Tu = 25°C, IF = 16A
G, Reverse Recovery Charge - 505 760 nC di/dt = 100A/ps co
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
© Starting To = 25°C, L =1.5mH
Rs = 259, IAS-- 16A. (See Figure 12)
© lsro S 16A, di/dt S MOA/ps, VDD S V(BR)ross,
T J 3 175°C.
© Pulse width 3 400ps; duty cycle 3 2%.
s This is a typical value at device destruction and represents
operation outside rated limits.
© This is a calculated value limited to TJ = 175°C .
* When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint dering techniques refer to application note
#AN-994.
