IRFR320BTM ,400V N-Channel B-FET / Substitute of IRFR320 & IRFR320AFeaturesThese N-Channel enhancement mode power field effect • 3.1A, 400V, R = 1.75Ω @V = 10 VDS(on) ..
IRFR320PBF ,400V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.
D-PAK
TO-252AA
l-PAK
TO-251AA
Absolute Maximum Ratings
- - 1 d Paramete ..
IRFR320PBF ,400V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount
IRFR320TR ,400V Single N-Channel HEXFET Power MOSFET in a D-Pak packageInternational PD-9.598A
1:212 Rectifier IRFR320
HEXFET® Power MOSFET |RFU320
q Dynamic dv/dt ..
IRFR320TR ,400V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.
D-PAK
TO-252AA
l-PAK
TO-251AA
Absolute Maximum Ratings
- - 1 d Paramete ..
IRFR320TRPBF , Power MOSFET
ISL83220EIA ,+/-15kV ESD Protected/ +3V to +5.5V/ 1Microamp/ 250kbps/ RS-232 Transmitters/Receiversfeatures of each Any System Requiring RS-232 Communication Portsdevice comprising the ICL32XXE 3V ..
ISL83220EIB ,+/-15kV ESD Protected/ +3V to +5.5V/ 1Microamp/ 250kbps/ RS-232 Transmitters/ReceiversFeatures1Microamp, 250kbps, RS-232 • ESD Protection for RS-232 I/O Pins to ±15kV (IEC1000)Transmitt ..
ISL83220EIV ,+/-15kV ESD Protected/ +3V to +5.5V/ 1Microamp/ 250kbps/ RS-232 Transmitters/ReceiversISL83220ETMData Sheet September 2001 File Number 6011.1+/-15kV ESD Protected, +3V to +5.5V,
ISL83239EIA ,15kV ESD Protected/ 10nA Supply- Current/ 3V to +5.5V/ 250kbps/ RS-232 Transmitters/ReceiversFeaturesCurrent, +3V to +5.5V, 250kbps, RS-232 ESD Protection For RS-232 I/O Pins to ±15kV (IEC10 ..
ISL83239EIV ,15kV ESD Protected/ 10nA Supply- Current/ 3V to +5.5V/ 250kbps/ RS-232 Transmitters/Receiversapplications are cell phones, On-Chip Voltage Converters Require Only Four External CapacitorsPDA ..
ISL8323IB ,Low-Voltage/ Single Supply/ Dual SPST Analog SwitchesApplicationsISL8323 ISL8324 ISL8325• Battery Powered, Handheld, and Portable EquipmentNumber of Swi ..
IRFR320BTM
400V N-Channel B-FET / Substitute of IRFR320 & IRFR320A
IRFR320B / IRFU320B March 2001 IRFR320B / IRFU320B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.1A, 400V, R = 1.75Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 14 nC) planar, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. D D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● D-PAK I-PAK G S G IRFR Series IRFU Series D S !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRFR320B / IRFU320B Units V Drain-Source Voltage 400 V DSS I - Continuous (T = 25°C) Drain Current 3.1 A D C - Continuous (T = 100°C) 2.0 A C I (Note 1) Drain Current - Pulsed 12.4 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 240 mJ AS I Avalanche Current (Note 1) 3.1 A AR E (Note 1) Repetitive Avalanche Energy 4.1 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 41 W C - Derate above 25°C 0.33 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 3.05 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. A, March 2001
