IRFR310BTM ,400V N-Channel B-FET / Substitute of IRFR310 & IRFR310AFeaturesThese N-Channel enhancement mode power field effect • 1.7A, 400V, R = 3.4Ω @V = 10 VDS(on) ..
IRFR310PBF ,400V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D-PAK l-PAK
TO~252AA TO-251AA
Absolute Maximum Ratings
Parameter Max. -___,_t_ ..
IRFR310TR ,400V Single N-Channel HEXFET Power MOSFET in a D-Pak packageInternatiqnal PD-9.597A
TOR Rectifier IRFR310
HEXFETO Power MOSFET IRFU31 O
q Dynamic dv/dt ..
IRFR310TRPBF , Power MOSFET
IRFR320 ,400V Single N-Channel HEXFET Power MOSFET in a D-Pak packageInternational PD-9.598A
1:212 Rectifier IRFR320
HEXFET® Power MOSFET |RFU320
q Dynamic dv/dt ..
IRFR320BTM ,400V N-Channel B-FET / Substitute of IRFR320 & IRFR320AFeaturesThese N-Channel enhancement mode power field effect • 3.1A, 400V, R = 1.75Ω @V = 10 VDS(on) ..
ISL83088EIBZ , -15kV ESD Protected, 5V, Full Fail-Safe, Fractional (1/8) Unit Load, RS-485/RS-422 Transceivers
ISL83088EIUZ , -15kV ESD Protected, 5V, Full Fail-Safe, Fractional (1/8) Unit Load, RS-485/RS-422 Transceivers
ISL83220ECA ,+/-15kV ESD Protected/ +3V to +5.5V/ 1Microamp/ 250kbps/ RS-232 Transmitters/ReceiversFEATURES0kbpNO. OF DATA MANUAL AUTOMATIC S- PART NO. OF NO. OF MONITOR Rx. RATE Rx. ENABLE READY PO ..
ISL83220ECV ,+/-15kV ESD Protected/ +3V to +5.5V/ 1Microamp/ 250kbps/ RS-232 Transmitters/Receiversapplications are PDAs, Palmtops, 0.1µ F CapacitorsL32and notebook and laptop computers where the lo ..
ISL83220ECV-T , ±15kV ESD Protected, 3V to 5.5V, 1Microamp, 250kbps, RS-232 Transmitters/Receivers
ISL83220ECVZ-T , ±15kV ESD Protected, 3V to 5.5V, 1Microamp, 250kbps, RS-232 Transmitters/Receivers
IRFR310BTF-IRFR310BTM-IRFU310BTU
400V N-Channel B-FET / Substitute of IRFR310 & IRFR310A
IRFR310B / IRFU310B November 2001 IRFR310B / IRFU310B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.7A, 400V, R = 3.4Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 7.7 nC) planar, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. D !!!!!!!! D ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● I-PAK D-PAK GS IRFR Series IRFU Series GS D !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRFR310B / IRFU310B Units V Drain-Source Voltage 400 V DSS I - Continuous (T = 25°C) Drain Current 1.7 A D C - Continuous (T = 100°C) 1.1 A C I (Note 1) Drain Current - Pulsed 6.0 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 100 mJ AS I Avalanche Current (Note 1) 1.7 A AR E (Note 1) Repetitive Avalanche Energy 2.6 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 26 W C - Derate above 25°C 0.21 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 4.76 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. B, November 2001
