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IRFR2905Z
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95811
International IRFR2905Z
" . . AUTOMOTIVE MOSFET
TOR Rectifier IRFU2905Z
HEXFET© Power MOSFET
Features D
. Advanced Process Technology VDSS = 55V
. Ultra Low On-Resistance
o 175°C Operating Temperature
. Fast Switching G ' A RDS(on) = 14.5mQ
o Repetitive Avalanche Allowed up to Tjmax
s ID 42A
Description
Specifically designed for Automotive applications, this HEXFETO
Power MOSFET utilizes the latest processing techniques to 1;;iii)),
achieve extremely low on-resistance per silicon area. Additional ''iiii's'"'1 G"
features of this design are a 175°C junction operating tempera- l, r ,
ture, fast switching speed and improved repetitive avalanche '
rating . These features combine to make this design an extremely
efficientand reliable device for usein Automotive applications and D-Pak l-Pak
a wide variety of other applications. IRFR29052 IRFU2905Z
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 59
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 42 A
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 42
Iron, Pulsed Dram Current OD 240
PD @Tc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.72 W/°C
VGS Gate-to-Source Voltage f: 20 V
EAS(Thermallylimi1ed) Single Pulse Avalanche Energy© 55 m J
E AS (Tested ) Single Pulse Avalanche Energy Tested Value © 82
IAR Avalanche Current OD See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy © m J
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1N'm)
Thermal Resistance
Parameter . Max.
ROJC un on- 1 .38
ROJA un on- mou 40
ROJA un on- 110
HEXFET© is a registered trademark of International Rectifier.
1
1 1/24/03
IRFR/U2905Z
International
TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Vss = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.053 - N//% Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 11.1 14.5 ms} VGS = 10V, b = 36A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Ws = I/ss, b = 250pA
gts Forward Transconductance 20 - - S Vos = 25V, ID = 36A
loss Drain-to-Source Leakage Current - - 20 PA Vos = 55V, Vss = 0V
- - 250 Vros = 55V, Vss = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 200 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
Qg Total Gate Charge - 29 44 ID = 36A
Qgs Gate-to-Source Charge - 7.7 - nC Ws = 44V
qu Gate-to-Drain ("Miller") Charge - 12 - Vss = 10V ©
Re Gate Input Resistance - 1.3 - Q f= 1MHz, open drain
tum Turn-On Delay Time - 14 - vDD = 28V
t, Rise Time - 66 - lo = 36A
tum) Turn-Off Delay Time - 31 - ns Rs = 15 Q
tr Fall Time - 35 - VGS = 10V ©
Lo Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) ir-, )
Ls Internal Source Inductance - 7.5 - from package Gk]
and center of die contact s
Ciss Input Capacitance - 1380 - VGs = 0V
Coss Output Capacitance - 240 - Vos = 25V
Crss Reverse Transfer Capacitance - 120 - pF f = 1.0MHz
Coss Output Capacitance - 820 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Cass Output Capacitance - 190 - Vss = 0V, Vros = 44V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 300 - VGS = 0V, Ws = 0V to 44V (9
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 36 MOSFET symbol D
(Body Diode) A showing the ‘7]:
ISM Pulsed Source Current - - 240 integral reverse e (rd,
(Body Diode) C) p-n junction diode. a
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 36A, VGS = 0V ©
trr Reverse Recovery Time - 23 35 ns To = 25°C, IF = 36A, VDD = 28V
er Reverse Recovery Charge - 16 24 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
