IRFR2407TRLPBF ,75V Single N-Channel HEXFET Power MOSFET in a D-Pak packageInternational
TOR Rectifier“mm seDe
urf‘éce Mount (IRFR2407)
Straight Lead (IRFU2407)
Advance ..
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IRFR2407TRLPBF
75V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD-95033A
IRFR2407PbF
|RFU2407PbF
International
TOR Rectifier
. Surface Mount (IRFR2407)
. Straight Lead (IRFU2407) HEXFET© Power MOSFET
. Advanced Process Technology
. yn.ayiiid.v./dt Rating VDss = 75V
. Fast Switching
. Fully Avalanche Rated -
. Lead-Free G RDs(on) - 0.026Q
Description
Seventh Generation HEXFET® Power MOSFETs from ID = 42A©
International Rectifier utilize advanced processing s
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFETpower MOSFETs are well known for, provides
the designer with an extremely emcient and reliable 4 tit'
device for use in a wide variety of applications. t l
The D-Pak is designed for surface mounting using I
vapor phase, infrared, or wave soldering techniques. D-Pak l-Pak
The straight lead version (|RFU series) is for through- IRFR2407 IRFU2407
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC 2 25°C Continuous Drain Current, Vss @ 10V 426)
lo @ To a 100°C Continuous Drain Current, Vos @10V 29(3) A
lou Pulsed Drain Current C) 170
Po @Tc a 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 WI°C
Vos Gate-toSource Voltage , 20 V
EAS Single Pulse Avalanche Energy@ 130 m
IAR Avalanche Current® 25 A
EAR Repetitive Avalanche Energyd) 11 mJ
dv/dt Peak Diode Recovery dv/dt (3) 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1 firnrn from case)
Mounting Torque, 632 orM3 screw 10 |bf~in (h1Nen)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-toCase - 1 4
RNA Junction-to-Amblent (PCB mount)' - 50 'CM/
RNA Junction-tcr/ht/ent - 110
8 When mounted on 1" square PCB (FR-4 or G-IO Material) T
For recommended footprint and soldering techniques refer to application note #AN-994
1
12/10/04
IRFR/U2407PbF International
TOR Rectifier
Electrical Characteristics (ii) Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bppss Drain-to-Source Breakdown Voltage 75 - - V Vss = 0V, ID = 250pA
AV[ER)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.078 - VPC Reference to 25°C, ID = 1mA
RDS(0n) Static Drain-to-Source On-Resistance - 0.0218 0026 Q l/ss = lov, ID = 25A G)
Vesnh) Gate Threshold Voltage 2.0 - 4.0 V Ws = 10V, b = 250pA
grs Forward Transconductance 27 - - S Ws = 25V, ID = 25A
bss Cyain-ttFStxrce Leakage Current - - 20 pA lhys = 75V, Vas = 0V
- - 250 V03 = 60V, Vss = OV, TJ = 150°C
lees Gate-to-Source Forward Leakage - - 200 n A Ws = UN
- Gate-toSource Reverse Leakage - - -200 I/ss = -20V
09 Total Gate Charge - 74 110 ID = 25A
Qgs Gate-to-Source Charge - 13 19 nC Ws = 60V
di Gate-tty-Drain ("Miller") Charge - 22 34 Vss = love)
tam) Turn-On Delay Time - 16 - VDD = 38V
tr Rise Time - 90 - ns ID = 25A
law) Turn-Off Delay Time - 65 - Rs = 6.8Q
tr Fall Time - 66 - l/ss =10V 6)
Lo Internal Drain Inductance - 4.5 - Between Pd: AD
6mm (0.25in.) " N
nH from package j) FL;
Ls Internal Source Inductance - 7.5 - . IL,
and center of die contact 3
Css Input Capacitance - 2400 - Veg = 0V
Coss Output Capacitance - 340 - pF Ws = 25V
Crss Reverse Transfer Capacitance - 77 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 15700 - Veg = 0V. l/os = 1.0V. f = 1.0MHz
Coss Output Capacitance - 220 - I/ss = 0V. VDS = MN, f-- 1.0MHz
Coss eff. Effective Output Capacitance Cs) - 220 - I/ss = OV, I/ce = 0V to 60V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - 42© A showing the >
ISM Pulsed Source Current - - 170 integral reverse G 's
(Body Diode) CO p-n junction diode. s
l/so Diode Forward Voltage - - 1.3 V T: = 2YC, Is = 25A, Vss = 0V (i)
trr Reverse Recovery Time - 100 150 ns T: = 25''C, IF = 25A
l Reverse RecoveryCharge - 400 600 nC di/dt = 100A/ps (i)
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L5+LD)
Notes:
(D Repetitive rating; pulse width limited by C) Pulse width g 300ps,' duty cycle f 2%.
max. junction temperature. 2i) Coss eff. is a Foted capacitance that gives the same charging time
(2) Starting T: = 25''C, L = (h42mH as Coss while Vos is rising from o to 80% Voss
Rs = 259. IAS = 25A.
G) Iso S 25A, di/dt S 290A/ps, Voc, S VeRvss,
T: S 175°C
2
6) Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A
