IRFR220NTRLPBF ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max (mΩ) IDSS DS(on) D High frequency DC-DC converters200V 600 5.0A Lead-FreeB ..
IRFR220PBF ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak packagellnterroatktr?al
TOR Rectifier
PD-9.525D
IRFR220
HEXFET® Power MOSFET
. Dynamic dv/dt ..
IRFR220TR ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak packagellnterroatktr?al
TOR Rectifier
PD-9.525D
IRFR220
HEXFET® Power MOSFET
. Dynamic dv/dt ..
IRFR224 ,250V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.
Absolute Maximum Ratings
D-PAK
TO-252AA
PD-9.600A
IRFR224
IRFU224
I- ..
IRFR224TR ,250V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount
IRFR224TRPBF , Power MOSFET
ISL8112IRZ , High Light-Load Efficiency, Dual-Output Main Power Supply Controllers
ISL8120CRZ , Dual/n-Phase Buck PWM Controller with Integrated Drivers
ISL8120IRZ , Dual/n-Phase Buck PWM Controller with Integrated Drivers
ISL81483IB ,1/8 Unit Load/ 5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversApplicationsData rates up to 5Mbps are achievable by using the • High Node Count NetworksISL81487, ..
ISL81485IB ,5V/ 30Mbps/ RS-485/RS-422 TransceiverApplicationsDriver (Tx) outputs are short circuit protected, even for • SCSI “Fast 20” Drivers and ..
ISL81486IUZ ,5 V, ultra high speed, PROFIBUS, RS-485/RS-422 transceiver.ApplicationsReceiver (Rx) inputs feature a “fail-safe if open” design, • SCSI “Fast 40” Drivers and ..
IRFR220NTRLPBF
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
Tait Rectifier
SMPS MOSFET
PD- 95063A
IRFR220NPbF
IRFU220NPbF
HEXFET© Power MOSFET
Appif1tions VDSS RDS(on) max (mo) ID
q High frequency DC-DC converters 200V 600 5 0A
q Lead-Free .
Benefits
0 Low Gate to Drain Charge to Reduce 14it _ii,itt
Switching Losses Ri' l,
0 Fully Characterized Capacitance Including I. _
Effective Coss to Simplify Design, (See
App. Note AN1001)
q Fully Characterized Avalanche Voltage D-Pak l-Pak
IRFR22ON IRFU220N
and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 5.0
ID @ To = 100°C Continuous Drain Current, l/ss @ 10V 3.5 A
IDM Pulsed Drain Current C) 20
PD @Tc = 25°C Power Dissipation 43 W
Linear Derating Factor 0.71 W/°C
VGS Gate-to-Source Voltage l 20 V
dv/dt Peak Diode Recovery dv/dt © 7.5 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical SMPS Topologies
0 Telecom 48V input Forward Converters
Notes OD through (9 are on page 10
1
12/10/04
IRFR/U220NPbF
International
TOR Rectifier
Static @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, ID = 250pA
AV
Roswn) Static Drain-to-Source On-Resistance - - 600 mn VGS = 10V, ID = 2.9A CO
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Ws = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA Vros = 200V, VGS = 0V
- - 250 VDs = 160V, VGs = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 2.6 - - S N/ns = 50V, ID = 2.9A
% Total Gate Charge - 15 23 ID = 2.9A
Qgs Gate-to-Source Charge - 2.4 3.6 nC l/ns = 160V
di Gate-to-Drain ("Miller") Charge - 6.1 9.2 VGS = 10V,
tdmn) Turn-On Delay Time - 6.4 - VDD = 100V
tr Rise Time - 11 - ns ID = 2.9A
td(off) Turn-Off Delay Time - 2O - Rs = 249
t, Fall Time - 12 - VGS = 10V G)
Ciss Input Capacitance - 300 - VGs = 0V
Coss Output Capacitance - 53 - Vros = 25V
Crss Reverse Transfer Capacitance - 15 - pF f = 1.0MHz
Coss Output Capacitance - 300 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 23 - VGS = 0V, Vros = 160V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 46 - VGS = 0V, Vros = 0V to 160V (9
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 46 mJ
IAR Avalanche Current© - 2.9 A
EAR Repetitive Avalanche Energy© - 4.3 mJ
Thermal Resistance
Parameter Typ. Max. Units
Res: Junction-to-Case - 3.5
ReJA Junction-to-Ambient (PCB mount)' - 50 "C/VV
ReJA Junction-to-Ambient - 110
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 5.0 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - 20 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25''C, Is = 2.9A, Vss = 0V co
tn Reverse Recovery Time - 90 140 ns T: = 25°C, IF = 2.9A
Qrr Reverse RecoveryCharge - 320 480 nC di/dt = 100A/ps (9
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L3+LD)
2
