IRFU220NPBF ,200V Single N-Channel HEXFET Power MOSFET in a I-Pak packagePD- 94048IRFR220NSMPS MOSFET IRFU220N®HEXFET Power MOSFET
IRFU220PBF ,200V Single N-Channel HEXFET Power MOSFET in a I-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount
IRFU224 ,250V Single N-Channel HEXFET Power MOSFET in a I-Pak packageapplications.
Absolute Maximum Ratings
D-PAK
TO-252AA
PD-9.600A
IRFR224
IRFU224
I- ..
IRFU224 ,250V Single N-Channel HEXFET Power MOSFET in a I-Pak packageInternational
TOR
Rectifier
HEXFET® Power MOSFET
. Dynamic dv/dt Rating
. Repetitive ..
IRFU230A , Advanced Power MOSFET
IRFU230A , Advanced Power MOSFET
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ISL95870BHRZ , PWM DC/DC Controller with VID Inputs for Portable GPU Core-Voltage Regulator
ISL95870HRUZ-T , PWM DC/DC Controller with VID Inputs for Portable GPU Core-Voltage Regulator
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ISL95871CHRZ , SMBus Interfaced Battery Charger with Internal FETs
IRFR220N-IRFR220NPBF-IRFR220NTR-IRFR220NTRL-IRFU220N-IRFU220NPBF
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
PD- 94048
. f. IRFR220N
Tait ReCTI Ier SMPS MOSFET IRFU220N
HEXFET© Power MOSFET
Applications VD RD max (mn) ID
0 High frequency DC-DC converters 20038 S(on)600 5 0A
Benefits
o Low Gate to Drain Charge to Reduce ii))
Switching Losses Nd l
o Fully Characterized Capacitance Including l
Effective Coss to Simplify Design, (See
App. Note AN1001) l-P k
. Fully Characterized Avalanche Voltage IREI‘QZZIBN IRF-USZON
and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 5.0
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 3.5 A
IDM Pulsed Drain Current C) 20
PD @Tc = 25°C Power Dissipation 43 W
Linear Derating Factor 0.71 W/°C
VGS Gate-to-Source Voltage l 20 V
dv/dt Peak Diode Recovery dv/dt © 7.5 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Typical SMPS Topologies
0 Telecom 48V input Forward Converters
Notes C) through s are on page 10
11/29/00
IRFR/U220N
International
TOR Rectifier
Static @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, ID = 250pA
AV
Roswn) Static Drain-to-Source On-Resistance - - 600 mn VGS = 10V, ID = 2.9A co
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Ws = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA Vros = 200V, VGS = 0V
- - 250 VDs = 160V, VGs = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 2.6 - - S N/ns = 50V, ID = 2.9A
% Total Gate Charge - 15 23 ID = 2.9A
Qgs Gate-to-Source Charge - 2.4 3.6 nC Vos = 160V
di Gate-to-Drain ("Miller") Charge - 6.1 9.2 VGS = 10V,
tdmn) Turn-On Delay Time - 6.4 - VDD = 100V
tr Rise Time - 11 - ns ID = 2.9A
td(off) Turn-Off Delay Time - 20 - Rs = 24n
t, Fall Time - 12 - VGS = 10V ©
Ciss Input Capacitance - 300 - VGs = 0V
Coss Output Capacitance - 53 - Vros = 25V
Crss Reverse Transfer Capacitance .-..- 15 .-..- pF f = 1.0MHz
Coss Output Capacitance - 300 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 23 - N/ss = 0V, Vros = 160V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 46 - VGS = 0V, Vros = 0V to 160V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 46 mJ
IAR Avalanche Currenk0 - 2.9 A
EAR Repetitive Avalanche Energy0) - 4.3 mJ
Thermal Resistance
Parameter Typ. Max. Units
Ras: Junction-to-Case - 3.5
ReJA Junction-to-Ambient (PCB mount)' - 50 "C/VV
ReJA Junction-to-Ambient - 110
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 5.0 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - 20 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25''C, Is = 2.9A, Vss = 0V (9
tn Reverse Recovery Time - 90 140 ns T: = 25°C, IF = 2.9A
Qrr Reverse RecoveryCharge - 320 480 nC di/dt = 100Alps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by L3+LD)
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