IRFR220 ,4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETsllnterroatktr?al
TOR Rectifier
PD-9.525D
IRFR220
HEXFET® Power MOSFET
. Dynamic dv/dt ..
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IRFR220-IRFR220PBF-IRFR220TR-IRFU220-IRFU220PBF
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD-9.525D
rtternatkynal
1:212 Rectifier _ IRFR22O
HEXFET® Power MOSFET I R F U 220
0 Dynamic dv/dt Rating
o Repetitive Avalanche Rated
0 Surface Mount (IRFR220)
o Straight Lead (IRFU220)
0 Available in Tape & Reel
0 FastSwitching
0 Ease of Paralleling
VDSS = 200V
RDS(OFI) = 0.80Q
ID=4.8A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The D-Pak is designed for surface mounting using vapor phase, infrared, or Cirit,) (iiai"j"ii-st))
WN. "iiii)s,
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible In typical surface mount applications. D-PAK I-PAK
TO-252AA TO-251AA
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10 V 4.8
In @ To = 100°C Continuous Drain Current, I/ss @ 10 V 3.0 A
IDM Pulsed Drain Current (O 19
Pp © Tc = 25°C Power Dissipation 42 W
PD © TA = 25°C Power Dissipation (PCB Mount)" 2.5
Linear Derating Factor 0.33 W /° C
Linear Derating Factor (PCB Mount)" 0.020
Ves Gate-to-Source Voltage i20 V
EAS Single Pulse Avalanche Energy © 230 md
IAR Avalanche Current (i) 4.8 A
EAR Repetitive Avalanche Energy co 4.2 mJ
dv/dt Peak Diode Recovery dv/dt Cs) 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to +150 ot2
Soldering Temperature, for 10 seconds 260 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
ch Junction-to-Case - - 3.0
Ram Junction-to-Ambient (PCB mount)" - - 50 °C/W [
Fla, Junction-to-Ambient - - 1 10 i
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994,
IRFR220, iRFU220
Electrical Characteristics © TJ = 25°C (unless otherwise specified)
OD Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
co VDD=50V, starting TJ=25°C, L=14mH
RG=25§2, lAs=4.8A (See Figure 12)
Parameter Min. Typ. Max. Units Test Conditions
V(samss Drain-to-Source Breakdown Voltage 200 - m V Vss--0V, ID: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.29 - V/°C Reference to 25°C, ID: 1mA
Ros(on) Static Drain-to-Source On-Resistance - - 0.80 n VGS=10V, ID=2.QA ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, ID: 250PA
gis Forward Transconductance 1.7 - - S VDs=50V, lir=2.9A ©
. - - 25 VDs=200V, I/ss-HN
loss Drain-to-Source Leakage Current - - 250 uA VDs=160V, I/ss-HN, TJ=12SUC
lass Gate-to-Source Forward Leakage - - 100 n A Var=20V
Gate-to-Source Reverse Leakage - - -1OO Ves=-20V
Qg Total Gate Charge - - 14 ID=4.8A
Qgs Gate-to-Source Charge - - 3.0 " Vns=160V
di Gate-to-Drain ("Miller") Charge - - 7.9 VGs=10V See Fig. 6 and 13 ©
tam) Tum-On Delay Time - 7.2 - VDD=100V
tr Rise Time - 22 - ns lo=4.8A
tum) Turn-Off Delay Time - 19 - Rez18£2
tf Fall Time - 13 - RD=ZOQ See Figure 10 ©
Ln Internal Drain Inductance "r.-.. 4.5 - tt,v,t"('J.itie.') D
l nH from package GE
Ls Internal Source Inductance - 7.5 - and center 6f
2 die contact s
Ciss Input Capacitance - 260 - : VGs--0V
Coss Output Capacitance - 100 - pF _ Vos=25V
Crss Reverse Transfer Capacitance - 30 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ, Max. Units Test Conditions
Is Continuous Source Current - - 4 8 MOSFET symbol D
(Body Diode) . A showing the "ri-j)
ISM Pulsed Source Current - - 19 integral reverse t3 (l-l,
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 1.8 V TJ=25°C, Is=4.8A, VGs=0V ©
trr Reverse Recovery Time - 150 300 ns TJ=25°C, |F=4.8A
Orr Reverse Recovery Charge - 0.91 1.8 PC di/dt=100A/us 6)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
© 15035.2A, di/dem/Vps, VDDSV(BR)DSS.
TJS150°C
co Pulse width f 300 ps; duty cycle s:2%.
