IRFR214TR ,250V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible m typical surface mount
IRFR214TRPBF , Power MOSFET
IRFR220 ,4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETsllnterroatktr?al
TOR Rectifier
PD-9.525D
IRFR220
HEXFET® Power MOSFET
. Dynamic dv/dt ..
IRFR220A , Advanced Power MOSFET
IRFR220N ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max (mΩ) IDSS DS(on) Dl High frequency DC-DC converters200V 600 5.0ABenefitsl Lo ..
IRFR220NPBF ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD- 94048IRFR220NSMPS MOSFET IRFU220N®HEXFET Power MOSFET
ISL8101CRZ , Two-Phase Multiphase Buck PWM Controller with Integrated MOSFET Drivers
ISL8104CBZ , 8V to 14V, Single-Phase Synchronous Buck Pulse-Width Modulation PWM Controller With Integrated Gate Drivers
ISL8104CBZ , 8V to 14V, Single-Phase Synchronous Buck Pulse-Width Modulation PWM Controller With Integrated Gate Drivers
ISL8105AIBZ , 5V or 12V Single-Phase Synchronous Buck Converter PWM Controller withIntegrated MOSFET Gate Drivers
ISL8105AIBZ , 5V or 12V Single-Phase Synchronous Buck Converter PWM Controller withIntegrated MOSFET Gate Drivers
ISL8105AIBZ , 5V or 12V Single-Phase Synchronous Buck Converter PWM Controller withIntegrated MOSFET Gate Drivers
IRFR214-IRFR214TR-IRFU214
250V Single N-Channel HEXFET Power MOSFET in a D-Pak package
M _armNt, 1711“}3'14 V "r.. t'.. _ C [
PD-9.703A
IRFR214
llRFU214
VDSS = 250V
llnter,tailirqt,tall
1:212 Rectifier
HEXFET® Power MOSFET
o Dynamic dv/dt Rating
o Repetitive Avalanche Rated
0 Surface Mount (IRFR214)
0 Straight Lead (lfRFU214)
0 Available in Tape & Reel
tt Fast Switching
RDS(on) = Aon
0 Ease of Paralleling
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The D-Pak is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications. D-PAK l-PAK
TO-252AA TO-251AA
Absolute Maximum Ratings
Parameter Max. Units
ID © To = 25°C Continuous Drain Current, l/ss © 10 V 2.2
In © Tc = 100°C Continuous Drain Current, N/ss © 10 V 1.4 A
IDM Pulsed Drain Current C) 8.8
PD @ Tc = 25°C Power Dissipation 25 W
PD @ TA = 25°C Power Dissipation (PCB Mount)" 2.5
Linear Derating Factor 0.20 WPC
Linear Derating Factor (PCB Mount)" 0.020
VGs Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy © 190 mJ
[AR Avalanche Current co 2.2 A
EAR Repetitive Avalanche Energy co 2.5 mJ
dv/dt Peak Diode Recovery dv/dt © 4.8 V/ns
Tu, TSTG Junction and Storage Temperature Range -55 to +150 °C
1 Soldering Temperature, for 10 seconds 260 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ, Max. Units
ReJC Junction-to-Case - - 5.0
ReJA Junction-to-Ambient (PCB mount)" - - 50 °C/W
ReJA Junction-to-Ambient -- - 110
** When mounted on I" square PCB (FR-4 or G-IO Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
lRFR214, iRFU214
Electrical Characteristics tii! TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(Bn)Dss Drain-to-Source Breakdown Voltage 250 - - V 1hss=0V, ID: 250WA
AV(BF|)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.39 - V/°C Reference to 25°C, Io: 1mA
Roam) Static Drain-to-Source On-Resistance - - 2.0 f2 Vss=10V, lo=1.3A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, ID: 250PA
gis Forward Transconductance 0.80 - - S Vos=50V, b=1.3A ©
loss Drain-to-Source Leakage Current - - 25 pA Vos=250V, Nas-UN
- -.P.. 250 Vns=200V, VGs=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Var=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
09 Total Gate Charge --- - 8.2 lo=2.7A
Qgs Gate-to-Source Charge - - 1.8 nC VDs=200V
di Gate-to-Drain ("Miller") Charge - - 4.5 Vas=10V See Fig. 6 and 13 (4)
td(on) Turn-On Delay Time - 7.0 - VDD=125V
tr Rise Time - 7.6 - ns lo=2.7A
tdesi) Turn-Off Delay Time - 16 - RG=24Q
i, Fall Time - 7.0 - RD=45Q See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - tt2t"('Jtti1nd.') D
nH from package iif-i--
Ls Internal Source Inductance - 7.5 - Ind center 6f Hi)
die contact s
Ciss Input Capacitance - 140 - I/ss-HN
Coss Output Capacitance - 42 - pF Vos=25V
Cms Reverse Transfer Capacitance - 9.6 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 2 2 MOSFET symbol D
(Body Diode) . A showing the 'rc,-,,':
ISM Pulsed Source Current - - 8 8 integral reverse G (1Ll'
(Body Diode) OD . p-n junction diode. S
Vso Diode Forward Voltage - - 2.0 V TJ=25°C, Is=2.2A, Vay=OV ©
tr, Reverse Recovery Time - 190 390 ns TJ=25°C, lp=2.7A
G, Reverse Recovery Charge - 0.65 1.3 pc di/dt=100A/us (4)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
(2) Voo=50V, starting TJ=25°C, L262mH
RG=2SQ. IAS=2.2A (See Figure 12)
TJS150°C
© ISDSZZA, di/dts65A/ps, VDDSV(BH)DSS,
© Pulse width s: 300 us; duty cycle 32%.
