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IRFR18N15
SMPS MOSFET
I t ticnal PD- 93815A
n e m C) I O n a
ifi |RFR18N15D
TOR ReCTI Ier SMPS MOSFET |RFU18N15D
HEXFET® Power MOSFET
Applications Voss RDS(on) max ID
Hi h fre uenc DC-DC converters
. g q y 150V 0.1259 18A
Benefits
o Low Gate to Drain Charge to Reduce 4k
Switching Losses LR t
o Fully Characterized Capacitance Including t
Effective Coss to Simplify Design, (See
App. Note AN1001) D P k l-P k
. - a -
q Fully Characterized Avalanche Voltage IRFR18N15D |RFU1;N15D
and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, N/ss @ 10V 18
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 13 A
IDM Pulsed Drain Current (D 72
Po @Tc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/“C
VGS Gate-to-Source Voltage i 30 V
dv/dt Peak Diode Recovery dv/dt © 3.3 V/ns
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical SMPS Topologies
q Telecom 48V input DC-DC Active Clamp Reset Forward Converter
Notes co through © are on page 10
1
2/23/00
IRlzR18ll15D/lRFU18ll15D
International
TOR Rectifier
Static @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 150 - - V Veg = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.17 - VI°C Reference to 25°C, ID = 1mA ©
Roam Static Drain-to-Source On-Resistance - 0.125 Q VGS = 10V, ID = 11A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.5 V VDS = VGS, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA Vros = 150V, VGS = 0V
- - 250 Vros = 120V, VGS = 0V, To = 150°C
I Gate-to-Source Forward Leakage - - 100 A N/ss = 30V
GSS Gate-to-Source Reverse Leakage - - -100 n l/ss = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 4.2 - - S Vos = 50V, Io = 11A
09 Total Gate Charge - 28 43 ID = 11A
Qgs Gate-to-Source Charge - 7.6 11 nC Vros = 120V
di Gate-to-Drain ("Miller") Charge - 14 21 VGS = 10V, ©
td(on) Turn-On Delay Time - 8.8 - VDD = 75V
tr Rise Time - 25 - ns ID = 11A
td(off) Turn-Off Delay Time - 15 - Rs = 6.89
k Fall Time - 9.8 - VGS = 10V (D
Ciss Input Capacitance - 900 - l/ss = 0V
Coss Output Capacitance - 190 - Vos = 25V
Crss Reverse Transfer Capacitance - 49 - pF f = 1.0MHz
Coss Output Capacitance - 1160 - VGS = 0V, VDS = 1.0V, f = 1.0MHz
Coss Output Capacitance - 88 - I/cs = 0V, Vos = 120V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 95 - VGs = 0V, Vos = 0V to 120V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 200 mJ
IAR Avalanche Current© - 11 A
EAR Repetitive Avalanche EnergyCD --- 11 mJ
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1 .4
' Junction-to-Ambient (PCB mount)* - 50 °C/W
ReJA Junction-to-Ambient - 110
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 18 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - 72 p-n junction diode. s
I/sro Diode Forward Voltage - - 1.3 V To = 25°C, ls = 11A, l/cs = 0V G)
tn Reverse Recovery Time - 130 190 ns To = 25°C, IF = 11A
Qrr Reverse RecoveryCharge - 660 980 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L5+LD)
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